All MOSFET. 2N6798JANTXV Datasheet

 

2N6798JANTXV MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6798JANTXV

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO205AF

2N6798JANTXV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N6798JANTXV Datasheet (PDF)

4.1. 2n6798 irff230.pdf Size:131K _international_rectifier

2N6798JANTXV
2N6798JANTXV

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFET?TRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40? 5.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la

4.2. 2n6796 2n6798 2n6800 2n6802.pdf Size:66K _omnirel

2N6798JANTXV
2N6798JANTXV

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTION This h

 4.3. 2n6798.pdf Size:21K _semelab

2N6798JANTXV
2N6798JANTXV

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40

Datasheet: 2N6796JANTX , 2N6796JANTXV , 2N6796SM , 2N6797 , 2N6797LCC4 , 2N6797-SM , 2N6798 , 2N6798JANTX , J310 , 2N6798SM , 2N6799 , 2N6799LCC4 , 2N6799-SM , 2N6800 , 2N6800JANTX , 2N6800JANTXV , 2N6800SM .

 
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