TPCF8303 PDF and Equivalents Search

 

TPCF8303 Specs and Replacement

Type Designator: TPCF8303

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: VS8

TPCF8303 substitution

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TPCF8303 datasheet

 ..1. Size:101K  toshiba
 tpcf8303.pdf pdf_icon

TPCF8303

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 58 m (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = -10 A (max) (V = -20 V) DSS DS Enhancement-model V = -0.45 to -... See More ⇒

 7.1. Size:238K  toshiba
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TPCF8303

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 47 m (typ.) (VGS = -4.5 V) (3) Low leakage ... See More ⇒

 7.2. Size:283K  toshiba
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TPCF8303

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 60 m (typ.) High forward transfer admittance Yfs = 5.9 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement model Vth = -0.8 to -2.0 V,... See More ⇒

 7.3. Size:225K  toshiba
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TPCF8303

TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8306 TPCF8306 TPCF8306 TPCF8306 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 90 m (typ.) (VGS = -4.5 V) (3) Low leakage current ... See More ⇒

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Detailed specifications: TPCC8005-H, TPCC8006-H, TPCC8102, TPCF8001, TPCF8102, TPCF8103, TPCF8104, TPCF8302, IRF540N, TPCL4201, TPCL4202, TPCL4203, TPCM8001-H, TPCM8002-H, TPCM8003-H, TPCM8004-H, TPCM8006

Keywords - TPCF8303 MOSFET specs

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