Справочник MOSFET. TPCF8303

 

TPCF8303 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: TPCF8303

Маркировка: F5C

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.35 W

Предельно допустимое напряжение сток-исток (Uds): 20 V

Предельно допустимое напряжение затвор-исток (Ugs): 8 V

Максимально допустимый постоянный ток стока (Id): 3 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 5.6 ns

Выходная емкость (Cd): 140 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.058 Ohm

Тип корпуса: VS8

Аналог (замена) для TPCF8303

 

 

TPCF8303 Datasheet (PDF)

1.1. tpcf8303.pdf Size:101K _toshiba2

TPCF8303
TPCF8303

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Y | = 6.0 S (typ.) fs • Low leakage current: I = -10 µA (max) (V = -20 V) DSS DS • Enhancement-model: V = -0.45 to -

3.1. tpcf8306.pdf Size:225K _update_mosfet

TPCF8303
TPCF8303

TPCF8306 MOSFETs Silicon P-Channel MOS (U-MOS) TPCF8306 TPCF8306 TPCF8306 TPCF8306 1. Applications 1. Applications 1. Applications 1. Applications • Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current:

3.2. tpcf8304.pdf Size:283K _toshiba2

TPCF8303
TPCF8303

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m? (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V, (VDS = -10 V,

 3.3. tpcf8302.pdf Size:261K _toshiba2

TPCF8303
TPCF8303

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement mode: Vth = -0.5 to -1.2 V

3.4. tpcf8305 en datasheet 100729.pdf Size:238K _toshiba2

TPCF8303
TPCF8303

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 m? (typ.) (VGS = -4.5 V) (3) Low leakage current: ID

Другие MOSFET... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 

 

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