TPCS8105 Specs and Replacement
Type Designator: TPCS8105
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 590 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TSSOP8
TPCS8105 substitution
- MOSFET ⓘ Cross-Reference Search
TPCS8105 datasheet
tpcs8105.pdf
TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 9.6 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage cur... See More ⇒
tpcs8102.pdf
TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current IDSS = -10... See More ⇒
tpcs8104.pdf
TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 8.1 m (typ.) DS (ON) High forward transfer admittance Y = 23 S (typ.) fs Low leakag... See More ⇒
tpcs8101.pdf
TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 12 S (typ.) fs Low leakage current IDSS = -10... See More ⇒
Detailed specifications: TPCS8004, TPCS8006, TPCS8007-H, TPCS8008-H, TPCS8009-H, TPCS8101, TPCS8102, TPCS8104, 2N7002, TPCS8204, TPCS8205, TPCS8208, TPCS8209, TPCS8210, TPCS8211, TPCS8212, TPCS8213
Keywords - TPCS8105 MOSFET specs
TPCS8105 cross reference
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