TPCS8204 MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

TPCS8204 Specs and Replacement

Type Designator: TPCS8204

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TSSOP8

TPCS8204 substitution

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TPCS8204 datasheet

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TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 13 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage... See More ⇒

7.1. Size:218K toshiba
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TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 13 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-... See More ⇒

7.2. Size:222K toshiba
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TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage cu... See More ⇒

7.3. Size:289K toshiba
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TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current IDSS = 10 ... See More ⇒

Detailed specifications: TPCS8006, TPCS8007-H, TPCS8008-H, TPCS8009-H, TPCS8101, TPCS8102, TPCS8104, TPCS8105, IRF9540N, TPCS8205, TPCS8208, TPCS8209, TPCS8210, TPCS8211, TPCS8212, TPCS8213, TPCS8214