TPCS8204 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPCS8204
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 230 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: TSSOP8
Аналог (замена) для TPCS8204
TPCS8204 Datasheet (PDF)
tpcs8204.pdf

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage
tpcs8208.pdf

TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-
tpcs8209.pdf

TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage cu
tpcs8205.pdf

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10
Другие MOSFET... TPCS8006 , TPCS8007-H , TPCS8008-H , TPCS8009-H , TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , IRF1010E , TPCS8205 , TPCS8208 , TPCS8209 , TPCS8210 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 .
History: QM3201S | SFF25P20S2I-02 | SM2305 | STF3LN62K3 | IRFU3708PBF | CJ3415 | GP1M007A065XX
History: QM3201S | SFF25P20S2I-02 | SM2305 | STF3LN62K3 | IRFU3708PBF | CJ3415 | GP1M007A065XX



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