All MOSFET. TPCS8209 Datasheet

 

TPCS8209 Datasheet and Replacement


   Type Designator: TPCS8209
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSSOP8
 

 TPCS8209 substitution

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TPCS8209 Datasheet (PDF)

 ..1. Size:222K  toshiba
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TPCS8209

TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage cu

 7.1. Size:218K  toshiba
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TPCS8209

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage

 7.2. Size:218K  toshiba
tpcs8208.pdf pdf_icon

TPCS8209

TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-

 7.3. Size:289K  toshiba
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TPCS8209

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10

Datasheet: TPCS8009-H , TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 , TPCS8208 , AO3400 , TPCS8210 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 .

History: NTMFS4936NT1G | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

Keywords - TPCS8209 MOSFET datasheet

 TPCS8209 cross reference
 TPCS8209 equivalent finder
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