Справочник MOSFET. TPCS8209

 

TPCS8209 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPCS8209
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TSSOP8
 

 Аналог (замена) для TPCS8209

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPCS8209 Datasheet (PDF)

 ..1. Size:222K  toshiba
tpcs8209.pdfpdf_icon

TPCS8209

TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage cu

 7.1. Size:218K  toshiba
tpcs8204.pdfpdf_icon

TPCS8209

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage

 7.2. Size:218K  toshiba
tpcs8208.pdfpdf_icon

TPCS8209

TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 13 m (typ.) DS (ON) High forward transfer admittance: |Y | = 15 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-

 7.3. Size:289K  toshiba
tpcs8205.pdfpdf_icon

TPCS8209

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: IDSS = 10

Другие MOSFET... TPCS8009-H , TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 , TPCS8208 , AO3400 , TPCS8210 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 .

History: MRF136 | CJ3415 | AONP36332 | IXTA98N075T | SSF1504D | SFF25P20S2I-02 | HF20N50

 

 
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