TPCS8211 Datasheet. Specs and Replacement

Type Designator: TPCS8211  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.4 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TSSOP8

  📄📄 Copy 

TPCS8211 substitution

- MOSFET ⓘ Cross-Reference Search

 

TPCS8211 datasheet

 ..1. Size:220K  toshiba
 tpcs8211.pdf pdf_icon

TPCS8211

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage cur... See More ⇒

 7.1. Size:241K  toshiba
 tpcs8210.pdf pdf_icon

TPCS8211

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement... See More ⇒

 7.2. Size:223K  toshiba
 tpcs8214.pdf pdf_icon

TPCS8211

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCS8214 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 10.5m (typ.) High forward transfer admittance Yfs = 10S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode ... See More ⇒

 7.3. Size:220K  toshiba
 tpcs8212.pdf pdf_icon

TPCS8211

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-... See More ⇒

SHOW MORE

Detailed specifications: TPCS8102, TPCS8104, TPCS8105, TPCS8204, TPCS8205, TPCS8208, TPCS8209, TPCS8210, 13N50, TPCS8212, TPCS8213, TPCS8214, TPCS8302, TPCS8303, TPCT4201, TPCT4202, TPCT4203

Keywords - TPCS8211 MOSFET specs

 TPCS8211 cross reference

 TPCS8211 equivalent finder

 TPCS8211 pdf lookup

 TPCS8211 substitution

 TPCS8211 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility