All MOSFET. TPCS8212 Datasheet

 

TPCS8212 Datasheet and Replacement


   Type Designator: TPCS8212
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSSOP8
 

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TPCS8212 Datasheet (PDF)

 ..1. Size:220K  toshiba
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TPCS8212

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-

 7.1. Size:241K  toshiba
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TPCS8212

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement

 7.2. Size:220K  toshiba
 tpcs8211.pdf pdf_icon

TPCS8212

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage cur

 7.3. Size:223K  toshiba
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TPCS8212

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCS8214 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode:

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Datasheet: TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 , TPCS8208 , TPCS8209 , TPCS8210 , TPCS8211 , AON7410 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 , TPCT4202 , TPCT4203 , TPCT4204 .

History: IRF7341 | IGLD60R190D1

Keywords - TPCS8212 MOSFET datasheet

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 TPCS8212 equivalent finder
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