All MOSFET. TPCS8213 Datasheet

 

TPCS8213 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPCS8213
   Marking Code: S8213
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 425 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TSSOP8

 TPCS8213 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCS8213 Datasheet (PDF)

 ..1. Size:180K  toshiba
 tpcs8213.pdf

TPCS8213 TPCS8213

TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCS8213 Lithium Ion Battery Applications Unit: mm Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mod

 7.1. Size:241K  toshiba
 tpcs8210.pdf

TPCS8213 TPCS8213

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement

 7.2. Size:220K  toshiba
 tpcs8211.pdf

TPCS8213 TPCS8213

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage cur

 7.3. Size:223K  toshiba
 tpcs8214.pdf

TPCS8213 TPCS8213

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCS8214 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode:

 7.4. Size:220K  toshiba
 tpcs8212.pdf

TPCS8213 TPCS8213

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-

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