TPCS8213 - аналоги и даташиты транзистора

 

TPCS8213 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TPCS8213
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 425 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TSSOP8
 

 Аналог (замена) для TPCS8213

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPCS8213 Datasheet (PDF)

 ..1. Size:180K  toshiba
 tpcs8213.pdf pdf_icon

TPCS8213

TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCS8213 Lithium Ion Battery Applications Unit: mm Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 8.4 m (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-mod

 7.1. Size:241K  toshiba
 tpcs8210.pdf pdf_icon

TPCS8213

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement

 7.2. Size:220K  toshiba
 tpcs8211.pdf pdf_icon

TPCS8213

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage cur

 7.3. Size:223K  toshiba
 tpcs8214.pdf pdf_icon

TPCS8213

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCS8214 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode:

ПОКАЗАТЬ ЕЩЁ

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History: 2N7002EGP | PDN4911S | B4N60 | IPA60R1K5CE | IRFR5305TRPBF | IRFP450PBF | MEE15N10-G

 

 
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