TPCT4201 Datasheet and Replacement
Type Designator: TPCT4201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: STP
TPCT4201 substitution
TPCT4201 Datasheet (PDF)
tpct4203.pdf

TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCT4203 Lithium-Ion Battery Applications (1Cell) Unit: mm Lead(Pb)-Free3.8 0.1 Small footprint due to a small and thin package Low source-source ON-resistance: RSS (ON) = 25.5 m (typ.) 140.375 High forward transfer admittance: |Yfs| = 18 S (typ.) 0.375 Low leakage current: ISSS = 10
tpct4204.pdf

TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCT4204 TENTATIVELithium Ion Secondary Battery Applications Unit: mm Lead(Pb)-Free 3.8 0.1 Small footprint due to small and thin package 1 Low source-source ON resistance: R = (22)m (typ.) SS (ON)40.45 2.00.1 High forward transfer admittance: |Yfs| = (25) S (typ.
Datasheet: TPCS8209 , TPCS8210 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , 5N60 , TPCT4202 , TPCT4203 , TPCT4204 , 2SJ148 , 2SJ167 , 2SJ342 , 2SK1061 , 2SK1825 .
History: IRFY140-T257 | NTMFS5C423NLT1G | STL100N10F7 | SSF6NS70F | SLP7N80C | STD4NK80Z | ELM32409LA-S
Keywords - TPCT4201 MOSFET datasheet
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History: IRFY140-T257 | NTMFS5C423NLT1G | STL100N10F7 | SSF6NS70F | SLP7N80C | STD4NK80Z | ELM32409LA-S



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