All MOSFET. TPCT4201 Datasheet

 

TPCT4201 Datasheet and Replacement


   Type Designator: TPCT4201
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: STP
 

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TPCT4201 Datasheet (PDF)

 ..1. Size:242K  toshiba
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TPCT4201

 7.1. Size:827K  toshiba
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TPCT4201

TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCT4203 Lithium-Ion Battery Applications (1Cell) Unit: mm Lead(Pb)-Free3.8 0.1 Small footprint due to a small and thin package Low source-source ON-resistance: RSS (ON) = 25.5 m (typ.) 140.375 High forward transfer admittance: |Yfs| = 18 S (typ.) 0.375 Low leakage current: ISSS = 10

 7.2. Size:242K  toshiba
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TPCT4201

 7.3. Size:120K  toshiba
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TPCT4201

TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCT4204 TENTATIVELithium Ion Secondary Battery Applications Unit: mm Lead(Pb)-Free 3.8 0.1 Small footprint due to small and thin package 1 Low source-source ON resistance: R = (22)m (typ.) SS (ON)40.45 2.00.1 High forward transfer admittance: |Yfs| = (25) S (typ.

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Datasheet: TPCS8209 , TPCS8210 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , RFP50N06 , TPCT4202 , TPCT4203 , TPCT4204 , 2SJ148 , 2SJ167 , 2SJ342 , 2SK1061 , 2SK1825 .

History: OSG60R1K8PF | PE532DY

Keywords - TPCT4201 MOSFET datasheet

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