TPCT4202 Specs and Replacement
Type Designator: TPCT4202
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: STP
TPCT4202 substitution
- MOSFET ⓘ Cross-Reference Search
TPCT4202 datasheet
tpct4203.pdf
TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCT4203 Lithium-Ion Battery Applications (1Cell) Unit mm Lead(Pb)-Free 3.8 0.1 Small footprint due to a small and thin package Low source-source ON-resistance RSS (ON) = 25.5 m (typ.) 1 4 0.375 High forward transfer admittance Yfs = 18 S (typ.) 0.375 Low leakage current ISSS = 10 ... See More ⇒
tpct4204.pdf
TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCT4204 TENTATIVE Lithium Ion Secondary Battery Applications Unit mm Lead(Pb)-Free 3.8 0.1 Small footprint due to small and thin package 1 Low source-source ON resistance R = (22)m (typ.) SS (ON) 4 0.45 2.0 0.1 High forward transfer admittance Yfs = (25) S (typ.... See More ⇒
Detailed specifications: TPCS8210, TPCS8211, TPCS8212, TPCS8213, TPCS8214, TPCS8302, TPCS8303, TPCT4201, 12N60, TPCT4203, TPCT4204, 2SJ148, 2SJ167, 2SJ342, 2SK1061, 2SK1825, 2SK982
Keywords - TPCT4202 MOSFET specs
TPCT4202 cross reference
TPCT4202 equivalent finder
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TPCT4202 substitution
TPCT4202 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: TPCT4204 | CJL2013 | SGSP475
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