All MOSFET. TPCT4203 Datasheet

 

TPCT4203 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPCT4203
   Marking Code: 203
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: STP

 TPCT4203 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCT4203 Datasheet (PDF)

 ..1. Size:827K  toshiba
 tpct4203.pdf

TPCT4203 TPCT4203

TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCT4203 Lithium-Ion Battery Applications (1Cell) Unit: mm Lead(Pb)-Free3.8 0.1 Small footprint due to a small and thin package Low source-source ON-resistance: RSS (ON) = 25.5 m (typ.) 140.375 High forward transfer admittance: |Yfs| = 18 S (typ.) 0.375 Low leakage current: ISSS = 10

 7.1. Size:242K  toshiba
 tpct4201.pdf

TPCT4203 TPCT4203

 7.2. Size:242K  toshiba
 tpct4202.pdf

TPCT4203 TPCT4203

 7.3. Size:120K  toshiba
 tpct4204.pdf

TPCT4203 TPCT4203

TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCT4204 TENTATIVELithium Ion Secondary Battery Applications Unit: mm Lead(Pb)-Free 3.8 0.1 Small footprint due to small and thin package 1 Low source-source ON resistance: R = (22)m (typ.) SS (ON)40.45 2.00.1 High forward transfer admittance: |Yfs| = (25) S (typ.

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