TPCT4204 Datasheet and Replacement
Type Designator: TPCT4204
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: STP
TPCT4204 substitution
TPCT4204 Datasheet (PDF)
tpct4204.pdf

TPCT4204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCT4204 TENTATIVELithium Ion Secondary Battery Applications Unit: mm Lead(Pb)-Free 3.8 0.1 Small footprint due to small and thin package 1 Low source-source ON resistance: R = (22)m (typ.) SS (ON)40.45 2.00.1 High forward transfer admittance: |Yfs| = (25) S (typ.
tpct4203.pdf

TPCT4203 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCT4203 Lithium-Ion Battery Applications (1Cell) Unit: mm Lead(Pb)-Free3.8 0.1 Small footprint due to a small and thin package Low source-source ON-resistance: RSS (ON) = 25.5 m (typ.) 140.375 High forward transfer admittance: |Yfs| = 18 S (typ.) 0.375 Low leakage current: ISSS = 10
Datasheet: TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 , TPCT4202 , TPCT4203 , IRF530 , 2SJ148 , 2SJ167 , 2SJ342 , 2SK1061 , 2SK1825 , 2SK982 , SSM3J15TE , SSM3J16TE .
History: BUZ83 | 2SK1008-01 | H04N60F | SFF240J | NCE60NF055F | WMN30N80M3
Keywords - TPCT4204 MOSFET datasheet
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History: BUZ83 | 2SK1008-01 | H04N60F | SFF240J | NCE60NF055F | WMN30N80M3



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