2SJ342 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ342
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.3 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 7 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 7.2 pF
Maximum Drain-Source On-State Resistance (Rds): 50 Ohm
Package: MINI
2SJ342 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ342 Datasheet (PDF)
1.1. 2sj342.pdf 
Size:310K _toshiba
2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.8~-2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC ? Characteristics Symbol Rating Un
5.1. 2sj349.pdf Size:401K _toshiba
2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m? (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to
5.2. 2sj344.pdf Size:310K _toshiba
2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.8~-2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1827 Marking Equivalent Circuit JEDEC ? Maximum Ratings (Ta = = 25°C) = = JEITA SC-70 Characterist
5.3. 2sj345.pdf Size:333K _toshiba
2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.5~-1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC TO-236MOD JEITA SC-59 Characteristics Symbol Ratin
5.4. 2sj346.pdf Size:307K _toshiba
2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.5~-1.5 V • High speed • Small package • Complementary to 2SK1829 Marking Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC ? Characteristics Symbol Rating Unit JEITA SC-70
5.5. 2sj343.pdf Size:337K _toshiba
2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.8~-2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1826 Marking Equivalent Circuit Maximum Ratings (Ta = JEDEC TO-236MOD = 25°C) = = JEITA SC-59 Charac
5.6. 2sj347.pdf Size:300K _toshiba
2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.5~-1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC ? Characteristics Symbol Rating Unit JEITA ? D
5.7. 2sj340.pdf Size:42K _sanyo
Ordering number:ENN6420 P-Channel Silicon MOSFET 2SJ340 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2093A 4V drive. [2SJ340] Enables simplified fabrication, high-density mount- 4.5 10.2 1.3 ing, and miniaturization in end products due to the surface mountable package. 1.2 0.8 0.4 1 2 3 1 :
5.8. 2sj348.pdf Size:39K _sanyo
Ordering number:ENN6421 P-Channel Silicon MOSFET 2SJ348 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2052C 4V drive. [2SJ348] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbo
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