SSM3K04FU MOSFET Datasheet: N-Ch, 20V, 0.1A. Full specification with pinout and replacement list

SSM3K04FU Specs and Replacement

Type Designator: SSM3K04FU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: USM

SSM3K04FU substitution

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SSM3K04FU datasheet

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SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source vol... See More ⇒

6.1. Size:582K toshiba
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SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit mm With built-in gate-source resistor RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage Vth = 0.7 1.3 V Small package Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gat... See More ⇒

6.2. Size:559K toshiba
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SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit mm 1.2 0.05 With built-in gate-source resistor RGS = 1 M (typ.) 0.8 0.05 2.5 V gate drive High input impedance Low gate threshold voltage Vth = 0.7 1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com ... See More ⇒

6.3. Size:238K toshiba
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