2SK30ATM Datasheet and Replacement

Power F-MOS FETs2SK3027 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

Power F-MOS FETs2SK3032 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.05

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3055SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3055 Isolated TO-220FEATURES Low On-State ResistanceRDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) (Isolated TO-220)

Power F-MOS FETs2SK3034 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK3013Case : ITO-3P(FP16W60VX2)600V 16AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 100-200V inputInverter

Power F-MOS FETs2SK3037 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.05

Power F-MOS FETs2SK3042Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 45mJunit: mm High-speed switching: tf = 30ns4.60.29.90.32.90.2 No secondary breakdown 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment 1.40.22.60.11.60.2 Switching powe

Power F-MOS FETs2SK3028 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown15.50.5 3.00.3 Low-voltage drive 3.20.1 High electrostatic breakdown voltage5 5 Applications Contactless relay Diving circuit for a solenoid55 Driving circuit

Power F-MOS FETs2SK3035Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0520.50.1

Ordering number : EN86222SK3093LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3093LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

Ordering number : EN86242SK3095LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3095LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

2SK3080Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-635A (Z)2nd. EditionMar. 2001Features Low on-resistanceRDS(on) = 20 m typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switchingOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3080Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrai

Power F-MOS FETs2SK3033 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

Power F-MOS FETs2SK3029 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.15.30.1 No secondary breakdown4.350.10.50.1 Low-voltage drive High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3060SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3060 TO-220AB2SK3060-S TO-262FEATURES Low on-state resistance2SK3060-ZJ TO-263RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

Power F-MOS FETs2SK3023 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.05

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK3012Case : MTO-3P(Unit : mm)(F16W60VX2)600V 12AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.Avalanche resistance guaranteed.APPLICATIONSwitching power supply of AC 100-200V input

2SK3081Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-636A (Z)3rd. EditionJul. 1998Features Low on-resistanceRDS(on) = 10m typ. 4V gate drive devices. High speed switchingOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3081Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3058SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3058 TO-220AB2SK3058-S TO-262FEATURES Super Low On-State Resistance 2SK3058-ZJ TO-263RDS(on)1 = 17 m MAX. (VGS = 10

Ordering number : EN86282SK3099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3099LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

Power F-MOS FETs2SK3036 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteedunit: mm High-speed switching6.50.12.30.1 Low ON-resistance 5.30.14.350.10.50.1 No secondary breakdown Low-voltage drive High electrostatic breakdown voltage Applications 1.00.10.10.052 Contactless relay 0.50.11 3 0.750.1 Div

Power F-MOS FETs2SK3026 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3089 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 25 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 30 V) Enhancement mode : Vth = 1.5~3.0 V (VDS =

2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this d

2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3051 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 24 m (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 50 V) Enhancement mode : Vth = 1.5~3.0 V (VDS = 1

2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this doc

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3017 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 1.05 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 720 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10

2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: G = 28dB (typ.) ps Recommend operation voltage: 5~15 V Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit

2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 16 m (typ.) High forward transfer admittance : |Yfs| = 26 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 30 V) Enhancement mode : Vth = 1.5~3.0 V (VDS =

2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF-AND UHF-BAND POWER AMPLIFIER Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products l

2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF-AND UHF-BAND POWER AMPLIFIER Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products l

2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.TheseTOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products listed in this document are intended for Unit: mmhigh frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in th

2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3068 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.4 (typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0~4.0 V (VDS =

2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS

www.DataSheet.co.krOrdering number : EN86252SK3096SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3096ApplicationsFeatures Low ON-resistance. High-speed switching. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source

Ordering number:EN856FN-Channel Junction Silicon FET2SK303Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ideal for potentiometers, analog switches, lowunit:mmfrequency amplifiers, constant current supplies, and2050Aimpedance conversion.[2SK303]0.40.1630 to 0.11 0.95 20.951.92.91 : Source2 : Drain3 : GateSANYO : CP

www.DataSheet.co.krOrdering number : EN86232SK3094SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3094ApplicationsFeatures High-speed switching. Low ON-resistance. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source

Ordering number:ENN6230N-Channel Silicon MOSFET2SK3021DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm 4V drive.2083B[2SK3021]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3021]6.5 2.35.0 0.540.50.851 2 30.61.21 : Gate0 to 0

Ordering number:ENN6229N-Channel Silicon MOSFET2SK3020DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2083B[2SK3020]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK3020]6.5 2.35.0 0.540.50.851 2 30.61.21 : Gate0 to 0

Ordering number : EN86272SK3098SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3098ApplicationsFeatures Low ON-resistance. High-speed switching. 15V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 V

Ordering number:EN850EN-Channel Junction Silicon FET2SK304Low-Frequency Amplifier ApplicationsFeatures Package Dimensions Ideal for potentiometers, analog switches, lowunit:mmfrequency amplifiers, and constant-current regula-2034Ators.[2SK304]2.24.00.40.50.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain3.0SANYO : SPA3.8nomSpecificationsAbsolute

Ordering number : ENN67882SK3092N-Channel Silicon MOSFET2SK3092Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Low Qg. 2083B[2SK3092]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPPackage Dimensionsunit : mm2092B[2SK3092]6.5 2.35.0 0.540.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3000Silicon N Channel MOS FETLow Frequency Power SwitchingREJ03G0379-0300Z(Previous ADE-208-585A (Z))Rev.3.00Jun.15.2004Features Low on-resistanceRDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capabilityOutlineMPAKD332 1. SourceG2. Gate13. Drain2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous: ADE-208-694I) Rev.11.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain(Flange)G3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

201041NEC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.

Preliminary Data Sheet 2SK3054C R07DS1285EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

2SK3070(L), 2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1063-0900 (Previous: ADE-208-684G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous: ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: L

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3057SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching application.2SK3057 Isolated TO-220FEATURES Low on-state resistanceRDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A)RDS(on)2 = 27 m MA

2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because ofundervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.1

Data Sheet2.5V Drive Nch MOSFET 2SK3018UB Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive(2.5V drive).(1) (2)0.65 0.65 0.131.3Abbreviated symbol : KN ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic ordering u

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit : mm) Structure Silicon N-channel EMT3MOSFET 1.6 0.70.550.3( )3 Applications ( ) ( )2 1Interfacing, switching (30V, 100mA) 0.2 0.20.150.5 0.51.0(1)Source Features (2)Gate1) Low on-resistance. (3)Drain Abbreviated symbol : KN2) Fast switching speed. 3) Low voltage drive (2.5

2SK3065TransistorsSmall switching (60V, 2A)2SK3065 Features External dimensions (Units : mm)1) Low on resistance.2) High-speed switching.4.5+0.2-0.11.60.1 1.50.13) Optimum for a pocket resource etc. because ofundervoltage actuation (2.5V actuation).4) Driving circuit is easy.(1) (2) (3)0.4+0.1-0.055) Easy to use parallel.0.40.1 0.50.1 0.40.11.50.1

2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit : mm) Structure Silicon N-channel UMT3MOSFET 2.0 0.90.3 0.2 0.7(3) Applications Interfacing, switching (30V, 100mA) (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Features (2) GateAbbreviated symbol : KN1) Low on-resistance. (3) Drain2) Fast switching s

Data Sheet2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3F(3)Features1) High-speed switching.(1) (2)2) Low voltage drive(2.5V drive).3) Drive circuits can be simple.4) Parallel use is easy.Abbreviated symbol : KN ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingType

2SK3019AFeatures Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C

2SK3019Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55

SK3018Features Low On-Resistiance Low Input Capaacitance Maximum Ratings

Power F-MOS FETs2SK3049Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteedunit: mm High-speed switching4.60.29.90.32.90.2 Low ON-resistance No secondary breakdown 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.40.22.60.11.60.2 Control equipment Switching power s

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3022Silicon N-channel power MOSFET Features Package Avalanche energy capability guaranteed Code High-speed switchingU-G2 Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source

Power F-MOS FETs2SK3046Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 130mJunit: mm VGSS = 30V guaranteed4.60.2 High-speed switching: tf = 60ns9.90.32.90.2 No secondary breakdown Applications 3.20.1 Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.40.22.60.11.60.2 Control

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOS FETs2SK3025Silicon N-channel power MOS FET Features Package Code Avalanche energy capability guaranteed High-speed switchingU-DL Low ON resistance Ron Pin Name No secondary breakdown1: Gate Low-voltage drive2: Drain High electrostatic energy capability3: Source

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3048Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed High-speed switching 3.20.1 Low on-resistance No secondary breakdown Applications Non-contact relay1.40.2 Solenoid drive 2.60.11.60.2

Power MOSFETs2SK3047Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 15 mJ Gate-source surrender voltage VGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact relay1.40.2 Solenoid drive 2.60.11.60.2 Motor dri

Silicon Junction FETs (Small Signal) 2SK3012SK301Silicon N-Channel JunctionUnit : mmFor low-frequency amplification5.0 0.2 4.0 0.2For switching Features Low noise, high gain High gate-drain voltage VGDO+0.2 +0.20.45 0.1 0.45 0.11.27 1.27 Absolute Maximum Ratings (Ta = 25C)1 2 3Parameter Symbol Rating Unit1 : Drain2 : GateDrain-Source voltage VDSX

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3030Silicon N-channel power MOSFETUnit: mm Features6.50.12.30.1 Avalanche energy capability guaranteed5.30.14.350.1 High-speed switching0.50.1 Low ON resistance Ron No secondary breakdown Low-voltage drive High electrostatic energy capability1.00.10.

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK3064Silicon N-channel MOSFETUnit: mmFor switching circuit0.15+0.100.3+0.10.050.0For rechargeable buttery pack (Li+ ion buttery, etc.)3 Features High gate-source voltage (Drain open) VGSO1 2 Low gate threshold voltage Vth(0.65) (0.65)1.30.12.00.2

Power MOSFETs2SK3045Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 15.6 mJ Gate-source surrender voltage VGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact relay1.40.2 Solenoid drive 2.60.11.60.2 Motor d

Power F-MOS FETs2SK3024Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0520.50.1

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3043Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 100 mJ Gate-source surrender voltage VGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact rela

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3044Silicon N-channel power MOSFETUnit: mm Features4.60.29.90.32.90.2 Avalanche energy capability guaranteed: EAS > 130 mJ Gate-source surrender voltageVGSS : 30 V guaranteed 3.20.1 High-speed switching No secondary breakdown Applications Non-contact relay

UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SK303L-x-AE3-R 2SK303G-x-AE3-R SOT-23

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-523 8@4V30V100mA13@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily des

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 8@4V30V 100mA13@2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment

2SK3003External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 200 V I = 100A, V = 0V(BR) DSS D GS V 200 VDSSI 100 nA V = 20VGSS GS V 20 VGSSI 100 A V = 200V, V = 0VDSS DS GS I 18 ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 72

2SK3004External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 250 V I = 100A, V = 0V(BR)DSS D GS V 250 VDSSI 100 nA V = 20VGSS GS V 20 VGSSI 100 A V = 250V, V = 0VDSS DS GS I 18 ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 72 A

2SK3018 N-Channel Enhancement Mode MOSFET Features External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Units:mm Structure SOT-323S

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.2SK3018SOT-23 (SOT-23 Field Effect Transistors)N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FE

2SK3018W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121GATEDescription: *GateSOT-323(SC-70) Protection Diode* Low on-resistance.2 SOURCE* Fast switching speed.* Low voltage drive (2.5V) makes this device ideal for portable equipment.* Easily designed drive circuits.* Easy to parallel.Features:* Simple Drive Requirement* Small Package OutlineMaxi

2SK3019TN-Channel MOSFET3P b Lead(Pb)-Free12 1. GATEFEATURES:2. SOURCE* Low on-resistance3. DRAIN* Fast switching speed* Low voltage drive makes this device ideal for portable equipmentSOT-523(SC-75)* Easily designed drive circuits* Easy to parallelMaximum Ratings (TA=25Cunless otherwise specified)Characteristic Symbol Values UnitDrain-Source Voltage VDSS 3

FM120-M WILLASTHRU2SK3018LT1SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineN-channel MOSFET Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURES le surface mounted application i

FM120-M WILLASTHRU2SK3019TT1SOT-523 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outline N-channel MOSFET FeaturesFEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low on-resistance Low

FM120-M WILLAS2SK3018WT1THRU SOT-323 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicat

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 External dimensions (Unit : mm) Structure Silicon N-channel EMT3MOSFET 1.6 0.70.550.3( )3 Applications ( ) ( )2 1Interfacing, switching (30V, 100mA) 0.2 0.20.150.5 0.51.0(1)Source Features (2)Gate1) Low on-resistance. (3)Drain Abbreviated sym

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3018 Transistor2.5V Drive Nch MOS FET External dimensions (Unit : mm) 2SK3018 SOT-3232.0 0.90.3 0.2 0.7 Structure (3)Silicon N-channel MOSFET (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications (2) GateAbbreviated symbol : KN(3) DrainInterfacing, switching (30V, 100mA) SO

Spec. No. : C800S3 Issued Date : 2010.07.19 CYStech Electronics Corp.Revised Date : 2013.12.10 Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V2SK3018S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla

Spec. No. : C800C3 Issued Date : 2011.01.19 CYStech Electronics Corp.Revised Date : Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

2SK3018 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,, Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applicatio

L2SK3018WT1GS-L2SK3018WT1GN-channel MOSFET100 mA, 30 V1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low on-resistance.Drain (3)Fast switching sp

LESHAN RADIO COMPANY, LTD.Silicon N-Channel MOSFET L2SK3019LT1GApplications3Interfacing,switching(30V,100mA)1Features 2Low on-resistanceSOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipmentEquivalent circuitDrive circuits can be simpleDrainParallel use is easywe declare that the material of product compliance with RoHS

LESHAN RADIO COMPANY, LTD.Silicon N-channel MOSFETL2SK3018WT1G100 mA, 30 V3 Features 1) Low on-resistance. 12) Fast switching speed. 23) Low voltage drive (2.5V) makes this device ideal for portable equipment.4) Easily designed drive circuits. SC-705) Easy to parallel. We declare that the material of product compliance with RoHS requirements.N - ChannelMAX

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SK3050TO-252Unit: mmFeatures6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7Low on-resistance.Fast switching speed.Wide SOA (safe operating area).0.1270.80+0.1 max-0.1Gate-source voltage (VGSS) gua

SMD Type Junction FETN-Channel Junction Silicon FET2SK303SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3Ideal for potentiometers, analog switches, lowfrequency amplifiers, constant current supplies, andimpedance conversion.1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.21Source1.Base1. Gate2SourceDrain2.Emitter2.3 Gate3. Drain3.collectorA

SMD Type MOSFETN-Channel MOSFET2SK3018SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30VDrain ID = 0.1 A1 2 RDS(ON) 8 (VGS = 4V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS = 2.5V)Gate1. Gate Gate2. SourceProtectionDiode3. DrainSource Absolute Maximum Ratings Ta = 25Par

SMD Type MOSFETN-Channel MOSFET2SK3024-ZTO-252 Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2 0.50 +0.8-0.2 Features-0.7 VDS (V) = 60V ID = 20 A (VGS = 10V)0.127 RDS(ON) 50m (VGS = 10V)0.80+0.1 max-0.1D RDS(ON) 70m (VGS = 4V)G Switching power supply1 Gate2.3 0.60+ 0.1- 0.1+0.154.60 -0.152 DrainS3 Source

SMD Type MOSFETN-Channel MOSFET2SK3019 Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this Drain device ideal for portable equipment. Easily designed drive circuits.1 Gate Easy to parallel.Gate2 Source3 Drain GateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

SMD Type ICSMD Type MOSFETSilicon N-Channel Power F-MOSFET2SK3031FeaturesTO-252Avalanche energy capacity guaranteedUnit: mm+0.15High-speed switching +0.16.50-0.15 2.30-0.15.30+0.2 0.50+0.8-0.2 -0.7Low ON-resistanceNo secondary breakdownLow-voltage drive0.1270.80+0.1 max-0.1High electrostatic breakdown voltage+0.12.3 0.60-0.1 1Gate4.60+0.15-0.152Dr

SMD Type MOSFETN-Channel MOSFET2SK3018SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V1 2Drain ID = 0.1 A+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 8 (VGS = 4V) RDS(ON) 13 (VGS = 2.5V)Gate1. Gate2. Source Gate 3. DrainProtectionDiodeSource Absolute Maximum Ratings Ta = 25Parameter

2SK3018WN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 30VDS I 300mAD R ( at V =10V) 8.0ohmDS(ON) GS R ( at V =4.5V) 13.0ohmDS(ON) GS ESD Protected Up to 2.5KV (HBM)General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

2SK3018N-Channel Power MOSFET MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source VoltageBVDSS 30 VGate- Source VoltageVGS +20 VDrain Current (continuous)IDR 100 mADrain Current (pulsed)IDRM 400 mATHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSCharacteristi

Plastic-Encapsulate Mosfets2SK3018FEATURESN-Channel MOSFET Fast switching speed and low on-resistance. Easily designed drived circuits.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)1.Gate2.SourceSOT-23Parameter Symbol Ratings Unit3.DrainVDS 30Drain-Source Voltage VVGSGate-source Voltage V20DrainIDDrain Current (Continuous) 100 mAIDMDra

2SK3019 N-channel MOSFET SOT-523 FEATURES 3 Low on-resistance 1 Fast switching speed 1. GATE Low voltage drive makes this device ideal for portable equipment 22. SOURCE Easily designed drive circuits 3. DRAIN Easy to parallel Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Units Symbol Parameter Value VDS D

2SK3018WN-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipmentLow voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)= 25C unless otherwise noted) MOSFET ELECTRICAL CHARACT

TAK CHEONG SEMICONDUCTOR150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units2 VDS Drain-Source Voltage 30 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 100 mA SOT-523 PD Power Dissipation 1

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETS2SK3018 N-Channel 30-V(D-S) MOSFET2SK3018 V(BR)DSS RDS(on)MAX IDSOT-23 SOT-3232.5@ 4.5V330V 0.1A1.GATE3.0@ 2.5V2.SOURCE3.DRAIN12 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for MARKING Equivalent Circuitpor

MMBT55512SK3018AO3400SI2305SOT-23 Plastic-Encapsulate MOSFETS2SK3018 N-channel MOSFETSOT-23FEATURES Low on-resistance Fast switching speed 1. GATE 2. SOURCE Low voltage drive makes this device ideal for portable equipment 3. DRAIN Easily designed drive circuits Easy to parallel Marking : KN MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted)

isc N-Channel MOSFET Transistor 2SK3060-ZFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3049FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3092DFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3096FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSO

isc N-Channel MOSFET Transistor 2SK3027FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3032FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =100m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3055FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3082SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3082LFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3070LFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3068BFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3060-SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3034FEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =35m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3013FEATURESDrain Current : I = 16A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3060-ZJFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3037FEATURESDrain Current : I =10A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =0.25m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3068KFEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3003FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.175(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor 2SK3022FEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3042FEATURESDrain Current : I =7A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R =0.6(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3028FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3046FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK308FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3051BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3069FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3067FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3050FEATURESDrain Current : I =2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =5.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3070SFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.8m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3009LSFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3094FEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3017FEATURESDrain Current : I = 8.5A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3035FEATURESDrain Current : I =3A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =1.1m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3090KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3093LSFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3089KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3048FEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3047FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 7(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3095LSFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3058-ZJFEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3080FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3033FEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =60m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3029FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =0.42m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3004FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor 2SK3030FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =230m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3089BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3060FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3009BFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3098FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3023FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3031FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =135m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3051KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3045FEATURESDrain Current : I = 2.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 4(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3024FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =50m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3012FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3081FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3058FEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3099LSFEATURESDrain Current : I = 9A@ T =25D CDrain Source Voltage: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

isc N-Channel MOSFET Transistor 2SK3043FEATURESDrain Current : I =5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R =1.3(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3036FEATURESDrain Current : I =6A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =450m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3057FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3092IFEATURESDrain Current : I = 3A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

isc N-Channel MOSFET Transistor 2SK3026FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =18m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3009PFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3090BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3044FEATURESDrain Current : I =7A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R =0.75(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3058-SFEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3085FEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid