2SK30ATM - описание и поиск аналогов

Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

Power F-MOS FETs 2SK3032 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3055 Isolated TO-220 FEATURES Low On-State Resistance RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) (Isolated TO-220)

Power F-MOS FETs 2SK3034 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK3013 Case ITO-3P (FP16W60VX2) 600V 16A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input Inverter

Power F-MOS FETs 2SK3037 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05

Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed EAS > 45mJ unit mm High-speed switching tf = 30ns 4.6 0.2 9.9 0.3 2.9 0.2 No secondary breakdown 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment 1.4 0.2 2.6 0.1 1.6 0.2 Switching powe

Power F-MOS FETs 2SK3028 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 15.5 0.5 3.0 0.3 Low-voltage drive 3.2 0.1 High electrostatic breakdown voltage 5 5 Applications Contactless relay Diving circuit for a solenoid 5 5 Driving circuit

Power F-MOS FETs 2SK3035 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05 2 0.5 0.1

Ordering number EN8622 2SK3093LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3093LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

Ordering number EN8624 2SK3095LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3095LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition Mar. 2001 Features Low on-resistance RDS(on) = 20 m typ. (VGS = 10V, ID = 15 A) 4V gate drive devices. High speed switching Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3080 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drai

Power F-MOS FETs 2SK3033 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

Power F-MOS FETs 2SK3029 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 5.3 0.1 No secondary breakdown 4.35 0.1 0.5 0.1 Low-voltage drive High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.0

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3060 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3060 TO-220AB 2SK3060-S TO-262 FEATURES Low on-state resistance 2SK3060-ZJ TO-263 RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK3012 Case MTO-3P (Unit mm) (F16W60VX2) 600V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 100-200V input

2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jul. 1998 Features Low on-resistance RDS(on) = 10m typ. 4V gate drive devices. High speed switching Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3081 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3058 TO-220AB 2SK3058-S TO-262 FEATURES Super Low On-State Resistance 2SK3058-ZJ TO-263 RDS(on)1 = 17 m MAX. (VGS = 10

Ordering number EN8628 2SK3099LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3099LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

Power F-MOS FETs 2SK3036 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed unit mm High-speed switching 6.5 0.1 2.3 0.1 Low ON-resistance 5.3 0.1 4.35 0.1 0.5 0.1 No secondary breakdown Low-voltage drive High electrostatic breakdown voltage Applications 1.0 0.1 0.1 0.05 2 Contactless relay 0.5 0.1 1 3 0.75 0.1 Div

Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor

2SK3089 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3089 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 25 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =

2SK3079A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this d

2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3051 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 27 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 50 V) Enhancement mode Vth = 1.5 3.0 V (VDS = 1

2SK3078A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3078A VHF/UHF Band Amplifier Applications Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this doc

2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK3017 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.05 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10

2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.035 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit

2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 16 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =

2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF-AND UHF-BAND POWER AMPLIFIER Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products l

2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF-AND UHF-BAND POWER AMPLIFIER Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products l

2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products listed in this document are intended for Unit mm high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in th

2SK3068 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3068 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 9.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS =

2SK3085 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3085 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 3 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS

www.DataSheet.co.kr Ordering number EN8625 2SK3096 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3096 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source

Ordering number EN856F N-Channel Junction Silicon FET 2SK303 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Ideal for potentiometers, analog switches, low unit mm frequency amplifiers, constant current supplies, and 2050A impedance conversion. [2SK303] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Source 2 Drain 3 Gate SANYO CP

www.DataSheet.co.kr Ordering number EN8623 2SK3094 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3094 Applications Features High-speed switching. Low ON-resistance. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source

Ordering number ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2083B [2SK3021] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3021] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0

Ordering number ENN6229 N-Channel Silicon MOSFET 2SK3020 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2083B [2SK3020] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3020] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0

Ordering number EN8627 2SK3098 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3098 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V

Ordering number EN850E N-Channel Junction Silicon FET 2SK304 Low-Frequency Amplifier Applications Features Package Dimensions Ideal for potentiometers, analog switches, low unit mm frequency amplifiers, and constant-current regula- 2034A tors. [2SK304] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3 2 Gate 3 Drain 3.0 SANYO SPA 3.8nom Specifications Absolute

Ordering number ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2083B [2SK3092] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP Package Dimensions unit mm 2092B [2SK3092] 6.5 2.3 5.0 0.5 4 0.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features Low on-resistance RDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capability Outline MPAK D 3 3 2 1. Source G 2. Gate 1 3. Drain 2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3069 Silicon N Channel MOS FET High Speed Power Switching REJ03G1062-1100 (Previous ADE-208-694I) Rev.11.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2010 4 1 NEC

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.

Preliminary Data Sheet 2SK3054C R07DS1285EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015 Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L

2SK3070(L), 2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1063-0900 (Previous ADE-208-684G) Rev.9.00 Sep 07, 2005 Features Low on-resistance RDS(on) =4.5 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(

2SK3082(L), 2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1065-0300 (Previous ADE-208-637A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name L

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching application. 2SK3057 Isolated TO-220 FEATURES Low on-state resistance RDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 m MA

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1

Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering u

2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated symbol KN 2) Fast switching speed. 3) Low voltage drive (2.5

2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units mm) 1) Low on resistance. 2) High-speed switching. 4.5+0.2 -0.1 1.6 0.1 1.5 0.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) 0.4+0.1 -0.05 5) Easy to use parallel. 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1

2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit mm) Structure Silicon N-channel UMT3 MOSFET 2.0 0.9 0.3 0.2 0.7 (3) Applications Interfacing, switching (30V, 100mA) (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Features (2) Gate Abbreviated symbol KN 1) Low on-resistance. (3) Drain 2) Fast switching s

Data Sheet 2.5V Drive Nch MOSFET 2SK3019EB Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3F (3) Features 1) High-speed switching. (1) (2) 2) Low voltage drive(2.5V drive). 3) Drive circuits can be simple. 4) Parallel use is easy. Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type

2SK3019A Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to +150 C

2SK3019 Features Low ON-Resistance Fast Switching Speed Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55

SK3018 Features Low On-Resistiance Low Input Capaacitance Maximum Ratings

Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed unit mm High-speed switching 4.6 0.2 9.9 0.3 2.9 0.2 Low ON-resistance No secondary breakdown 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.4 0.2 2.6 0.1 1.6 0.2 Control equipment Switching power s

Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed EAS > 130mJ unit mm VGSS = 30V guaranteed 4.6 0.2 High-speed switching tf = 60ns 9.9 0.3 2.9 0.2 No secondary breakdown Applications 3.2 0.1 Contactless relay Diving circuit for a solenoid Driving circuit for a motor 1.4 0.2 2.6 0.1 1.6 0.2 Control

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3025 Silicon N-channel power MOS FET Features Package Code Avalanche energy capability guaranteed High-speed switching U-DL Low ON resistance Ron Pin Name No secondary breakdown 1 Gate Low-voltage drive 2 Drain High electrostatic energy capability 3 Source

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3048 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed High-speed switching 3.2 0.1 Low on-resistance No secondary breakdown Applications Non-contact relay 1.4 0.2 Solenoid drive 2.6 0.1 1.6 0.2

Power MOSFETs 2SK3047 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 15 mJ Gate-source surrender voltage VGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact relay 1.4 0.2 Solenoid drive 2.6 0.1 1.6 0.2 Motor dri

Silicon Junction FETs (Small Signal) 2SK301 2SK301 Silicon N-Channel Junction Unit mm For low-frequency amplification 5.0 0.2 4.0 0.2 For switching Features Low noise, high gain High gate-drain voltage VGDO +0.2 +0.2 0.45 0.1 0.45 0.1 1.27 1.27 Absolute Maximum Ratings (Ta = 25 C) 1 2 3 Parameter Symbol Rating Unit 1 Drain 2 Gate Drain-Source voltage VDSX

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3030 Silicon N-channel power MOSFET Unit mm Features 6.5 0.1 2.3 0.1 Avalanche energy capability guaranteed 5.3 0.1 4.35 0.1 High-speed switching 0.5 0.1 Low ON resistance Ron No secondary breakdown Low-voltage drive High electrostatic energy capability 1.0 0.1 0.

This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK3064 Silicon N-channel MOSFET Unit mm For switching circuit 0.15+0.10 0.3+0.1 0.05 0.0 For rechargeable buttery pack (Li+ ion buttery, etc.) 3 Features High gate-source voltage (Drain open) VGSO 1 2 Low gate threshold voltage Vth (0.65) (0.65) 1.3 0.1 2.0 0.2

Power MOSFETs 2SK3045 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 15.6 mJ Gate-source surrender voltage VGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact relay 1.4 0.2 Solenoid drive 2.6 0.1 1.6 0.2 Motor d

Power F-MOS FETs 2SK3024 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05 2 0.5 0.1

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3043 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 100 mJ Gate-source surrender voltage VGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact rela

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3044 Silicon N-channel power MOSFET Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 Avalanche energy capability guaranteed EAS > 130 mJ Gate-source surrender voltageVGSS 30 V guaranteed 3.2 0.1 High-speed switching No secondary breakdown Applications Non-contact relay

UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SK303L-x-AE3-R 2SK303G-x-AE3-R SOT-23

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily des

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment

2SK3003 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 200 V I = 100 A, V = 0V (BR) DSS D GS V 200 V DSS I 100 nA V = 20V GSS GS V 20 V GSS I 100 A V = 200V, V = 0V DSS DS GS I 18 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 72

2SK3004 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 250 V I = 100 A, V = 0V (BR)DSS D GS V 250 V DSS I 100 nA V = 20V GSS GS V 20 V GSS I 100 A V = 250V, V = 0V DSS DS GS I 18 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 72 A

2SK3018 N-Channel Enhancement Mode MOSFET Features External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Units mm Structure SOT-323 S

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FE

2SK3018W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 GATE Description *Gate SOT-323(SC-70) Protection Diode * Low on-resistance. 2 SOURCE * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features * Simple Drive Requirement * Small Package Outline Maxi

2SK3019T N-Channel MOSFET 3 P b Lead(Pb)-Free 1 2 1. GATE FEATURES 2. SOURCE * Low on-resistance 3. DRAIN * Fast switching speed * Low voltage drive makes this device ideal for portable equipment SOT-523(SC-75) * Easily designed drive circuits * Easy to parallel Maximum Ratings (TA=25 Cunless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 3

FM120-M WILLAS THRU 2SK3018LT1 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURES le surface mounted application i

FM120-M WILLAS THRU 2SK3019TT1 SOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low on-resistance Low

FM120-M WILLAS 2SK3018WT1 THRU SOT-323 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicat

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 External dimensions (Unit mm) Structure Silicon N-channel EMT3 MOSFET 1.6 0.7 0.55 0.3 ( ) 3 Applications ( ) ( ) 2 1 Interfacing, switching (30V, 100mA) 0.2 0.2 0.15 0.5 0.5 1.0 (1)Source Features (2)Gate 1) Low on-resistance. (3)Drain Abbreviated sym

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3018 Transistor 2.5V Drive Nch MOS FET External dimensions (Unit mm) 2SK3018 SOT-323 2.0 0.9 0.3 0.2 0.7 Structure (3) Silicon N-channel MOSFET (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol KN (3) Drain Interfacing, switching (30V, 100mA) SO

Spec. No. C800S3 Issued Date 2010.07.19 CYStech Electronics Corp. Revised Date 2013.12.10 Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3018S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla

Spec. No. C800C3 Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3019C3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2.5V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead plating & ha

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

2SK3018 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applicatio

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching(30V,100mA) 1 Features 2 Low on-resistance SOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit Drive circuits can be simple Drain Parallel use is easy we declare that the material of product compliance with RoHS

LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET L2SK3018WT1G 100 mA, 30 V 3 Features 1) Low on-resistance. 1 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. SC-70 5) Easy to parallel. We declare that the material of product compliance with RoHS requirements. N - Channel MAX

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SK3050 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 Low on-resistance. Fast switching speed. Wide SOA (safe operating area). 0.127 0.80+0.1 max -0.1 Gate-source voltage (VGSS) gua

SMD Type Junction FET N-Channel Junction Silicon FET 2SK303 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and impedance conversion. 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1Source 1.Base 1. Gate 2Source Drain 2.Emitter 2. 3 Gate 3. Drain 3.collector A

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V Drain ID = 0.1 A 1 2 RDS(ON) 8 (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 13 (VGS = 2.5V) Gate 1. Gate Gate 2. Source Protection Diode 3. Drain Source Absolute Maximum Ratings Ta = 25 Par

SMD Type MOSFET N-Channel MOSFET 2SK3019 Features Low on-resistance. Fast switching speed. Low voltage drive (2.5V) makes this Drain device ideal for portable equipment. Easily designed drive circuits. 1 Gate Easy to parallel. Gate 2 Source 3 Drain Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Uni

SMD Type IC SMD Type MOSFET Silicon N-Channel Power F-MOSFET 2SK3031 Features TO-252 Avalanche energy capacity guaranteed Unit mm +0.15 High-speed switching +0.1 6.50-0.15 2.30-0.1 5.30+0.2 0.50+0.8 -0.2 -0.7 Low ON-resistance No secondary breakdown Low-voltage drive 0.127 0.80+0.1 max -0.1 High electrostatic breakdown voltage +0.1 2.3 0.60-0.1 1Gate 4.60+0.15 -0.15 2Dr

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V 1 2 Drain ID = 0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 8 (VGS = 4V) RDS(ON) 13 (VGS = 2.5V) Gate 1. Gate 2. Source Gate 3. Drain Protection Diode Source Absolute Maximum Ratings Ta = 25 Parameter

2SK3018W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 300mA D R ( at V =10V) 8.0ohm DS(ON) GS R ( at V =4.5V) 13.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

2SK3018 N-Channel Power MOSFET MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 30 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 100 mA Drain Current (pulsed) IDRM 400 mA THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Characteristi

Plastic-Encapsulate Mosfets 2SK3018 FEATURES N-Channel MOSFET Fast switching speed and low on-resistance. Easily designed drived circuits. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) 1.Gate 2.Source SOT-23 Parameter Symbol Ratings Unit 3.Drain VDS 30 Drain-Source Voltage V VGS Gate-source Voltage V 20 Drain ID Drain Current (Continuous) 100 mA IDM Dra

2SK3019 N-channel MOSFET SOT-523 FEATURES 3 Low on-resistance 1 Fast switching speed 1. GATE Low voltage drive makes this device ideal for portable equipment 2 2. SOURCE Easily designed drive circuits 3. DRAIN Easy to parallel Marking KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) Units Symbol Parameter Value VDS D

2SK3018W N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) = 25 C unless otherwise noted) MOSFET ELECTRICAL CHARACT

TAK CHEONG SEMICONDUCTOR 150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units 2 VDS Drain-Source Voltage 30 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 100 mA SOT-523 PD Power Dissipation 1

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-Channel 30-V(D-S) MOSFET 2SK3018 V(BR)DSS RDS(on)MAX ID SOT-23 SOT-323 2.5 @ 4.5V 3 30V 0.1A 1.GATE 3.0 @ 2.5V 2.SOURCE 3.DRAIN 1 2 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for MARKING Equivalent Circuit por

MMBT5551 2SK3018 AO3400 SI2305 SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES Low on-resistance Fast switching speed 1. GATE 2. SOURCE Low voltage drive makes this device ideal for portable equipment 3. DRAIN Easily designed drive circuits Easy to parallel Marking KN MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted)

isc N-Channel MOSFET Transistor 2SK3060-Z FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3049 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3092D FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3096 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

isc N-Channel MOSFET Transistor 2SK3027 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =12m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3032 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =100m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3055 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3082S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3082L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3070L FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3068B FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3060-S FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3034 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =35m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3013 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3060-ZJ FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3037 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =0.25m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3068K FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3003 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.175 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor 2SK3022 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3042 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R =0.6 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3028 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3046 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK308 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3051B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =50V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3069 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3067 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3050 FEATURES Drain Current I =2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R =5.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3070S FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3009LS FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3094 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3017 FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3035 FEATURES Drain Current I =3A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =1.1m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3090K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3093LS FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3089K FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3048 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3047 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 7 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3095LS FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3058-ZJ FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

isc N-Channel MOSFET Transistor 2SK3080 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3033 FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =60m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3029 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.42m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3004 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor 2SK3030 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =230m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3089B FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3060 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3009B FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3098 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3023 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3031 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =135m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3051K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =50V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3045 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 4 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3024 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =50m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3012 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3081 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3058 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3099LS FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

isc N-Channel MOSFET Transistor 2SK3043 FEATURES Drain Current I =5A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R =1.3 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

isc N-Channel MOSFET Transistor 2SK3036 FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R =450m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3057 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3092I FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3026 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =18m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3009P FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3090B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

isc N-Channel MOSFET Transistor 2SK3044 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R =0.75 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK3058-S FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor 2SK3085 FEATURES Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid