2SK879 Datasheet and Replacement
Type Designator: 2SK879
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 0.0065 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 850 Ohm
Package: USM SC70
2SK879 substitution
2SK879 Datasheet (PDF)
2sk879.pdf
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =
Datasheet: 2SK3857MFV , 2SK3857TK , 2SK3857TV , 2SK4059CT , 2SK4059MFV , 2SK4059TK , 2SK4059TV , 2SK711 , IRFZ44 , 2SK880Y , TTK101MFV , TTK101TK , 2SJ181L , 2SJ181S , 2SJ186 , 2SJ216 , 2SJ217 .
History: SWD15N65J | SM5A27NSFP | TMW20N65HG | SWD13N60K2 | 2SK211
Keywords - 2SK879 MOSFET datasheet
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History: SWD15N65J | SM5A27NSFP | TMW20N65HG | SWD13N60K2 | 2SK211
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