2SK879 Datasheet and Replacement
Type Designator: 2SK879
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id|ⓘ - Maximum Drain Current: 0.0065 A
Tjⓘ - Maximum Junction Temperature: 125 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 850 Ohm
Package: USM SC70
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2SK879 Datasheet (PDF)
2sk879.pdf
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 12N70L-TA3-T | AP9962AGP-HF | 12P10L-TM3-T | IRFR2905Z | IRF6100PBF | TSM9435CS | AFN6820
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History: 12N70L-TA3-T | AP9962AGP-HF | 12P10L-TM3-T | IRFR2905Z | IRF6100PBF | TSM9435CS | AFN6820
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