2SK879 PDF and Equivalents Search

 

2SK879 Specs and Replacement

Type Designator: 2SK879

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Id| ⓘ - Maximum Drain Current: 0.0065 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 850 Ohm

Package: USM SC70

2SK879 substitution

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2SK879 datasheet

 ..1. Size:576K  toshiba
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2SK879

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit mm High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low noise NF = 0.5dB (typ.) (RG = 100 k , f = 120 Hz) Small package Absolute Maximum Ratings (Ta = ... See More ⇒

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2SK879

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2SK879

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Detailed specifications: 2SK3857MFV, 2SK3857TK, 2SK3857TV, 2SK4059CT, 2SK4059MFV, 2SK4059TK, 2SK4059TV, 2SK711, IRF640, 2SK880Y, TTK101MFV, TTK101TK, 2SJ181L, 2SJ181S, 2SJ186, 2SJ216, 2SJ217

Keywords - 2SK879 MOSFET specs

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