2SJ319S Datasheet and Replacement

SMD Type MOSFET P-Channel MOSFET 2SJ319S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-200V ID =-3 A (VGS =-10V) 0.127 D +0.1 0.80-0.1 max RDS(ON) 2.3 (VGS =-10V) G High speed switching Low drive current + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source S 4 Drain

Preliminary Datasheet R07DS0396EJ0300 2SJ319(L), 2SJ319(S) (Previous REJ03G0858-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0

2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Package

2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 0.7 S (typ.) fs Complementary to 2SK2013 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS

2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ312 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 80 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mo

2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ315 DC-DC Converter Unit mm FEATURES 4- Volt gate drive Low drain-source ON resistance R = 0.25 (typ.) DS (ON) High forward transfer admittance Y = 3.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode V = -0.8 -2.0 V (V = -1

Ordering number EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ316] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25

2SJ317 Silicon P Channel MOS FET REJ03G0857-0200 (Previous ADE-208-1191) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features Very low on-resistance High speed switching Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code PLZZ0004CA-A R (Package name

FUJI POWER MOSFET 2SJ314-01L,S P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features K-Pack(L) K-Pack(S) High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier L-type EIAJ Maximum ratings and characterist