2SJ350 Datasheet and Replacement

2SJ350 Silicon P Channel MOS FET REJ03G0859-0200 (Previous: ADE-208-138) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet 2SJ358C R07DS1262EJ0300Rev.3.00P-CHANNEL MOSFET FOR SWITCHING Aug 17, 2015Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 143 m MAX. (VGS = -1

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ358P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHPackage Drawings (unit: mm)The 2SJ358 is a P-channel vertical MOS FET that can5.7 0.1be used as a switching element. The 2SJ358 can be1.5 0.12.0 0.2directly driven by an IC operating at 5 V.The 2SJ358 features a low on-resistance and excellentswitching characteristics, and is suitable

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ356P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ356 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)a switching element that can be directly driven by the output of an4.5 0.1IC operating at 5 V.1.6 0.2This product has a low ON resistance and superb switching 1.5 0.1characteristics and is ideal for

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ353P-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SJ353 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)a switching element that can be directly driven by the output of an7.0 MAX.1.2IC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for driving the actu

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ357P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHThe 2SJ357 is a P-channel vertical MOS FET that can bePackage Drawings (unit: mm)used as a switching element. The 2SJ357 can be directly5.7 0.1driven by an IC operating at 5 V.1.5 0.12.0 0.2The 2SJ357 features a low on-resistance and excellentswitching characteristics, and is suitable

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ355P-CHANNEL MOS FETFOR HIGH SWITCHINGThe 2SJ355 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)a switching element that can be directly driven by the output of an4.5 0.1IC operating at 5 V.1.6 0.2This product has a low ON resistance and superb switching 1.5 0.1characteristics and is ideal for drivi

SMD Type MOSFETP-Channel MOSFET2SJ3561.70 0.1 Features VDS (V) =-60V ID =-2 A (VGS =-10V)0.42 0.1 RDS(ON) 0.5 (VGS =-10V) 0.46 0.1 RDS(ON) 0.95 (VGS =-4V)1.Gate2.DrainDrain (D)3.SourceInternalGate (G)diodeGateprotectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

2SJ355www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL