2SJ505L MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ505L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 225 nS
Cossⓘ - Output Capacitance: 2100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: LDPAK
2SJ505L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ505L Datasheet (PDF)
rej03g0872 2sj505lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj505.pdf
2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Pack
2sj509.pdf
2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ509 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 1.35 (typ.) DS (ON) High forward transfer admittance : |Y | = 0.7 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -100 V) DS Enhanc
2sj508.pdf
2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ508 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 1.35 (typ.) DS (ON) High forward transfer admittance : |Y | = 0.7 S (typ.) fs Low leakage current : IDSS = -100 A (V = -100 V) DS Enhancement-
2sj507.pdf
2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ507 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.5 (typ.) DS (ON) High forward transfer admittance : |Y | = 1.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancem
2sj503.pdf
Ordering number:ENN5932P-Channel Silicon MOSFET2SJ503DC/DC Converter ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ503]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ503]6.5 2.35.0 0.540.50.851 2
2sj501.pdf
Ordering number:ENN5948AP-Channel Silicon MOSFET2SJ501Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 2.5V drive.[2SJ501]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol C
2sj502.pdf
Ordering number:ENN6178AP-Channel Silicon MOSFET2SJ502Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2091A 4V drive.[2SJ502]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Con
2sj506.pdf
2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Pac
rej03g0871 2sj504ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj504.pdf
2SJ504 Silicon P Channel MOS FET REJ03G0871-0400 (Previous: ADE-208-546B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG2. Drain3.
rej03g0873 2sj506lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sj48 2sj49 2sj50.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sj506s.pdf
SMD Type MOSFETP-Channel MOSFET2SJ506STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-30VD ID =-10 A0.127+0.10.80-0.1max RDS(ON) 85m (VGS =-10V)G RDS(ON) 180 (VGS =-4V)+ 0.12.3 0.60- 0.1 1 Gate+0.154 .60 -0.15 2 Drain3 SourceS4 Drain Absolute Maximum Ratings Ta
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HY15P03C2 | WM10N02M | 2SJ505
History: HY15P03C2 | WM10N02M | 2SJ505
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