2SJ505S MOSFET. Datasheet pdf. Equivalent

2SJ505S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ505S Datasheet (PDF)

4.1. rej03g0872 2sj505lsds.pdf Size:111K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. 2sj505.pdf Size:98K _renesas

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features � Low on-resistance RDS (on) = 0.017 ? typ. � Low drive current. � 4 V gate drive devices. � High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDP

 5.1. 2sj508.pdf Size:136K _toshiba

2SJ508 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ508 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 1.35 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 0.7 S (typ.) fs Low leakage current : IDSS = -100 µA (V = -100 V) DS Enhancement-mod

5.2. 2sj507.pdf Size:138K _toshiba

2SJ507 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ507 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.5 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement

 5.3. 2sj509.pdf Size:142K _toshiba

2SJ509 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ509 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 1.35 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 0.7 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -100 V) DS Enhanceme

5.4. 2sj501.pdf Size:238K _sanyo

Ordering number:ENN5948A P-Channel Silicon MOSFET 2SJ501 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistance. unit:mm � Ultrahigh-speed switching. 2091A � 2.5V drive. [2SJ501] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditio

 5.5. 2sj502.pdf Size:170K _sanyo

Ordering number:ENN6178A P-Channel Silicon MOSFET 2SJ502 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistance. unit:mm � Ultrahigh-speed switching. 2091A � 4V drive. [2SJ502] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions

5.6. 2sj503.pdf Size:87K _sanyo

Ordering number:ENN5932 P-Channel Silicon MOSFET 2SJ503 DC/DC Converter Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � 4V drive. [2SJ503] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ503] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6

5.7. 2sj504.pdf Size:89K _renesas

2SJ504 Silicon P Channel MOS FET REJ03G0871-0400 (Previous: ADE-208-546B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance RDS (on) = 0.042 ? typ. � Low drive current. � 4 V gate drive devices. � High speed switching. Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2

5.8. rej03g0871 2sj504ds.pdf Size:102K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. rej03g0873 2sj506lsds.pdf Size:102K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.10. 2sj506.pdf Size:89K _renesas

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance RDS (on) = 0.065 ? typ. (at VGS = �10 V, ID = �5 A) � Low drive current � High speed switching � 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS00

5.11. 2sj48 2sj49 2sj50.pdf Size:192K _hitachi

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5.12. 2sj506s.pdf Size:1240K _kexin

SMD Type MOSFET P-Channel MOSFET 2SJ506S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-30V D ● ID =-10 A 0.127 +0.1 0.80-0.1 max ● RDS(ON) ＜ 85mΩ (VGS =-10V) G ● RDS(ON) ＜ 180Ω (VGS =-4V) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain 3 Source S 4 Drain ■ Absolute Maximum Ratings Ta

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