BUK9618-30 Datasheet. Specs and Replacement

Type Designator: BUK9618-30  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT404

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BUK9618-30 substitution

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BUK9618-30 datasheet

 ..1. Size:50K  philips
 buk9618-30 1.pdf pdf_icon

BUK9618-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9618-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 55 A Thedevice feat... See More ⇒

 6.1. Size:55K  philips
 buk9618-55 1.pdf pdf_icon

BUK9618-30

Philips Semiconductors Product specification TrenchMOS transistor BUK9618-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 57 A the device fea... See More ⇒

 6.2. Size:333K  philips
 buk9518-55a buk9618-55a.pdf pdf_icon

BUK9618-30

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q... See More ⇒

 7.1. Size:68K  philips
 buk95180-100a buk96180-100a.pdf pdf_icon

BUK9618-30

Philips Semiconductors Product specification TrenchMOS transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench tec... See More ⇒

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Detailed specifications: BUK9524-55, BUK9528-55, BUK9535-55, BUK9606-30, BUK9608-55, BUK9610-30, BUK9614-30, BUK9614-55, AO4468, BUK9618-55, BUK9620-55, BUK9624-55, BUK9628-55, BUK9635-55, BUK9675-55, BUK9775-55, BUK98150-55

Keywords - BUK9618-30 MOSFET specs

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