2SJ530L Datasheet. Specs and Replacement

Type Designator: 2SJ530L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: DPAK

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2SJ530L datasheet

 0.1. Size:108K  renesas
 rej03g0880 2sj530lsds.pdf pdf_icon

2SJ530L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:95K  renesas
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2SJ530L

2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (... See More ⇒

 8.2. Size:1426K  cn vbsemi
 2sj530stl.pdf pdf_icon

2SJ530L

2SJ530STL www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym... See More ⇒

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Detailed specifications: 2SJ506L, 2SJ506S, 2SJ527L, 2SJ527S, 2SJ528L, 2SJ528S, 2SJ529L, 2SJ529S, IRLB4132, 2SJ530S, 2SJ549L, 2SJ549S, 2SJ550L, 2SJ550S, 2SJ551L, 2SJ551S, 2SJ552L

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