2SJ530L Specs and Replacement
Type Designator: 2SJ530L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DPAK
2SJ530L substitution
2SJ530L datasheet
rej03g0880 2sj530lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sj530.pdf
2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (... See More ⇒
2sj530stl.pdf
2SJ530STL www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sym... See More ⇒
Detailed specifications: 2SJ506L , 2SJ506S , 2SJ527L , 2SJ527S , 2SJ528L , 2SJ528S , 2SJ529L , 2SJ529S , SKD502T , 2SJ530S , 2SJ549L , 2SJ549S , 2SJ550L , 2SJ550S , 2SJ551L , 2SJ551S , 2SJ552L .
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