2SK1151S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1151S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5
Ohm
Package:
DPAK
2SK1151S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1151S
Datasheet (PDF)
..1. Size:265K inchange semiconductor
2sk1151s.pdf 
isc N-Channel MOSFET Transistor 2SK1151SFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
7.1. Size:90K renesas
2sk1151.pdf
2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous: ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code:
7.2. Size:119K renesas
r07ds0397ej 2sk115152.pdf
Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ03002SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200)Rev.3.00Silicon N Channel MOS FET May 16, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin
7.3. Size:273K inchange semiconductor
2sk1151l.pdf
isc N-Channel MOSFET Transistor 2SK1151LFEATURESDrain Current I = 1.5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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