2SK1151S MOSFET Datasheet: N-Ch, 450V, 1.5A. Full specification with pinout and replacement list

2SK1151S Specs and Replacement

Type Designator: 2SK1151S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: DPAK

2SK1151S substitution

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2SK1151S datasheet

..1. Size:265K inchange semiconductor
2sk1151s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1151S FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

7.1. Size:90K renesas
2sk1151.pdf pdf_icon

2SK1151(L), 2SK1151(S) 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET REJ03G0907-0200 (Previous ADE-208-1245) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code ... See More ⇒

7.2. Size:119K renesas
r07ds0397ej 2sk115152.pdf pdf_icon

Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outlin... See More ⇒

7.3. Size:273K inchange semiconductor
2sk1151l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK1151L FEATURES Drain Current I = 1.5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 5.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: 2SJ550S, 2SJ551L, 2SJ551S, 2SJ552L, 2SJ552S, 2SJ553L, 2SJ553S, 2SK1151L, STP80NF70, 2SK1152L, 2SK1152S, 2SK1155, 2SK1156, 2SK1158, 2SK1160, 2SK1162, 2SK1167