BUK9620-55
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9620-55
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 116
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
SOT404
BUK9620-55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9620-55
Datasheet (PDF)
..1. Size:55K philips
buk9620-55 2.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 52 Athe device fea
0.1. Size:963K nxp
buk9620-55a.pdf
BUK9620-55AN-channel TrenchMOS logic level FETRev. 02 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
6.1. Size:196K philips
buk9620-100b.pdf
BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
6.2. Size:321K philips
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
6.3. Size:698K nxp
buk9620-100b.pdf
BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
Datasheet: BUK9535-55
, BUK9606-30
, BUK9608-55
, BUK9610-30
, BUK9614-30
, BUK9614-55
, BUK9618-30
, BUK9618-55
, IRFP064N
, BUK9624-55
, BUK9628-55
, BUK9635-55
, BUK9675-55
, BUK9775-55
, BUK98150-55
, BUK9830-30
, BUK9840-55
.
