Справочник MOSFET. BUK9620-55

 

BUK9620-55 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9620-55
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 116 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для BUK9620-55

 

 

BUK9620-55 Datasheet (PDF)

 ..1. Size:55K  philips
 buk9620-55 2.pdf

BUK9620-55 BUK9620-55

Philips Semiconductors Product specification TrenchMOS transistor BUK9620-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 52 Athe device fea

 0.1. Size:963K  nxp
 buk9620-55a.pdf

BUK9620-55 BUK9620-55

BUK9620-55AN-channel TrenchMOS logic level FETRev. 02 4 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 6.1. Size:196K  philips
 buk9620-100b.pdf

BUK9620-55 BUK9620-55

BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 6.2. Size:321K  philips
 buk9520-100a buk9620-100a buk9620-100a.pdf

BUK9620-55 BUK9620-55

BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t

 6.3. Size:698K  nxp
 buk9620-100b.pdf

BUK9620-55 BUK9620-55

BUK9620-100BN-channel TrenchMOS logic level FETRev. 02 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

Другие MOSFET... BUK9535-55 , BUK9606-30 , BUK9608-55 , BUK9610-30 , BUK9614-30 , BUK9614-55 , BUK9618-30 , BUK9618-55 , 2N7000 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , BUK9775-55 , BUK98150-55 , BUK9830-30 , BUK9840-55 .

 

 
Back to Top