2SK1518 Datasheet PDF and Equivalents Search

 ..1. Size:202K  inchange semiconductor
 2sk1518.pdf

isc N-Channel MOSFET Transistor 2SK1518 ESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

 8.1. Size:97K  renesas
 rej03g0947 2sk1517ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:84K  renesas
 2sk1517.pdf

2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 (Previous ADE-208-1287) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod... See More ⇒

 8.3. Size:84K  renesas
 2sk1515.pdf

2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod... See More ⇒

 8.4. Size:83K  renesas
 2sk1519 2sk1520.pdf

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod... See More ⇒

 8.5. Size:97K  renesas
 rej03g0946 2sk1515ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.6. Size:1474K  fuji
 2sk1511.pdf

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRig... See More ⇒

 8.7. Size:147K  fuji
 2sk1512-01.pdf

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 8.8. Size:203K  inchange semiconductor
 2sk1516.pdf

isc N-Channel MOSFET Transistor 2SK1516 ESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

 8.9. Size:200K  inchange semiconductor
 2sk1519.pdf

isc N-Channel MOSFET Transistor 2SK1519 ESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

 8.10. Size:202K  inchange semiconductor
 2sk1517.pdf

isc N-Channel MOSFET Transistor 2SK1517 ESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

 8.11. Size:202K  inchange semiconductor
 2sk1515.pdf

isc N-Channel MOSFET Transistor 2SK1515 ESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒