All MOSFET. 2SK3147S Datasheet

 

2SK3147S MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3147S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 5 A

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: DPAK

2SK3147S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3147S Datasheet (PDF)

7.1. rej03g1072 2sk3147lsds.pdf Size:233K _renesas

2SK3147S
2SK3147S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.2. 2sk3147.pdf Size:94K _renesas

2SK3147S
2SK3147S

2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous: ADE-208-731) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(

 8.1. 2sk3148.pdf Size:88K _renesas

2SK3147S
2SK3147S

2SK3148 Silicon N Channel MOS FET High Speed Power Switching REJ03G1073-0200 (Previous: ADE-208-748) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

8.2. 2sk3141.pdf Size:87K _renesas

2SK3147S
2SK3147S

2SK3141 Silicon N Channel MOS FET High Speed Power Switching REJ03G1070-0400 (Previous: ADE-208-680B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

 8.3. rej03g1073 2sk3148ds.pdf Size:102K _renesas

2SK3147S
2SK3147S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. rej03g1070 2sk3141ds.pdf Size:101K _renesas

2SK3147S
2SK3147S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. rej03g1074 2sk3149ds.pdf Size:102K _renesas

2SK3147S
2SK3147S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. 2sk3140.pdf Size:86K _renesas

2SK3147S
2SK3147S

2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 (Previous: ADE-208-767C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D 1. Gate 2. Drain G 3. Source 1 2

8.7. 2sk3149.pdf Size:87K _renesas

2SK3147S
2SK3147S

2SK3149 Silicon N Channel MOS FET High Speed Power Switching REJ03G1074-0400 (Previous: ADE-208-767C) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1

8.8. 2sk3142.pdf Size:49K _hitachi

2SK3147S
2SK3147S

2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A (Z) 2nd. Edition Feb. 1999 Features • Low on-resistance RDS(on) =4mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to sour

8.9. 2sk3148.pdf Size:201K _inchange_semiconductor

2SK3147S
2SK3147S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK3148 ·FEATURES ·With TO-220F packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power supply ·ABSOLUT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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