All MOSFET. 2SK3150L Datasheet

 

2SK3150L MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3150L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 20 A

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: LDPAK

2SK3150L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3150L Datasheet (PDF)

0.1. rej03g1075 2sk3150lsds.pdf Size:109K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. 2sk3150.pdf Size:95K _renesas

2SK3150L
2SK3150L

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =45 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(L)

 8.1. 2sk315.pdf Size:175K _sanyo

2SK3150L
2SK3150L

Ordering number:EN1005B N-Channel Junction Silicon FET 2SK315 FM Tuner Applications Features Package Dimensions · Ideal for FM tuners in radios, stereos, etc. unit:mm · Because it is compactly packaged, sets can be made 2040A compact. [2SK315] · Small Crss (Crss=0.08pF typ). 2.2 4.0 · High yfs (yfs=12.0ms typ). 0.4 0.5 0.4 0.4 1 2 3 1 : Drain 1.3 1.3 2 : Source 3 :

8.2. rej03g1077 2sk3152ds.pdf Size:102K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. 2sk3158.pdf Size:54K _renesas

2SK3150L
2SK3150L

2SK3158 Silicon N Channel MOS FET High Speed Power Switching REJ03G1083-0400 (Previous: ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain

8.4. 2sk3157.pdf Size:89K _renesas

2SK3150L
2SK3150L

2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 (Previous: ADE-208-769A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

 8.5. 2sk3159.pdf Size:101K _renesas

2SK3150L
2SK3150L

2SK3159 Silicon N Channel MOS FET High Speed Power Switching REJ03G1084-0400 Rev.4.00 May 15, 2006 Features • Low on-resistance RDS = 23 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain G (Flange) 3. Source 1 2 S 3 Rev.4.00 May 15, 2

8.6. 2sk3153.pdf Size:88K _renesas

2SK3150L
2SK3150L

2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 (Previous: ADE-208-733A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

8.7. 2sk3151.pdf Size:88K _renesas

2SK3150L
2SK3150L

2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Sour

8.8. rej03g1082 2sk3157ds.pdf Size:103K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.9. rej03g1080 2sk3155ds.pdf Size:102K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.10. 2sk3155.pdf Size:88K _renesas

2SK3150L
2SK3150L

2SK3155 Silicon N Channel MOS FET High Speed Power Switching REJ03G1080-0500 (Previous: ADE-208-768C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2

8.11. rej03g1084 2sk3159ds.pdf Size:106K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.12. 2sk3154.pdf Size:88K _renesas

2SK3150L
2SK3150L

2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 (Previous: ADE-208-682A) Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

8.13. 2sk3152.pdf Size:88K _renesas

2SK3150L
2SK3150L

2SK3152 Silicon N Channel MOS FET High Speed Power Switching REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

8.14. rej03g1076 2sk3151ds.pdf Size:102K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.15. rej03g1078 2sk3153ds.pdf Size:102K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.16. 2sk3156.pdf Size:88K _renesas

2SK3150L
2SK3150L

2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 (Previous: ADE-208-683A) Rev.3.01 Apr 27, 2006 Features • Low on-resistance RDS =50 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1

8.17. rej03g1083 2sk3158ds.pdf Size:67K _renesas

2SK3150L
2SK3150L

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.18. 2sk3152.pdf Size:223K _inchange_semiconductor

2SK3150L
2SK3150L

isc N-Channel MOSFET Transistor 2SK3152 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 130mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 120 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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