2SK3150S MOSFET PDF: N-Ch, 100V, 20A. Datasheet. Full specification with pinout and replacement list

2SK3150S Specs and Replacement

   Type Designator: 2SK3150S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: LDPAK

2SK3150S substitution

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2SK3150S datasheet

..1. Size:357K inchange semiconductor
2sk3150s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3150S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

7.1. Size:109K renesas
rej03g1075 2sk3150lsds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

7.2. Size:95K renesas
2sk3150.pdf pdf_icon

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous ADE-208-750B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)... See More ⇒

7.3. Size:283K inchange semiconductor
2sk3150l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3150L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

Detailed specifications: 2SK3134L , 2SK3134S , 2SK3135L , 2SK3135S , 2SK3141-01 , 2SK3147L , 2SK3147S , 2SK3150L , 20N50 , 2SK3161L , 2SK3161S , 2SK3210L , 2SK3210S , 2SK3211L , 2SK3211S , 2SK3274L , 2SK3274S .