2SK3210S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3210S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 180
nS
Cossⓘ -
Output Capacitance: 820
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
LDPAK
2SK3210S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3210S
Datasheet (PDF)
..1. Size:357K inchange semiconductor
2sk3210s.pdf
isc N-Channel MOSFET Transistor 2SK3210SFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
7.1. Size:157K renesas
2sk3210.pdf
2SK3210(L), 2SK3210(S)Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0414-0300(Previous ADE-208-760A (Z))Rev.3.00Sep. 30, 2004Features Low on-resistanceRDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V sourceOutlineLDPAKD4 41. Gate2. DrainG3. Source4. Drain123123SAbsolute Maximum Rating
7.2. Size:164K renesas
r07ds0409ej 2sk3210ls.pdf
Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400(Previous: REJ03G0414-0300)Silicon N Channel MOS FET Rev.4.00High Speed Power Switching May 16, 2011Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
7.3. Size:283K inchange semiconductor
2sk3210l.pdf
isc N-Channel MOSFET Transistor 2SK3210LFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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