2SK3210S Datasheet. Specs and Replacement

Type Designator: 2SK3210S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: LDPAK

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2SK3210S substitution

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2SK3210S datasheet

 ..1. Size:357K  inchange semiconductor
 2sk3210s.pdf pdf_icon

2SK3210S

isc N-Channel MOSFET Transistor 2SK3210S FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 7.1. Size:157K  renesas
 2sk3210.pdf pdf_icon

2SK3210S

2SK3210(L), 2SK3210(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G0414-0300 (Previous ADE-208-760A (Z)) Rev.3.00 Sep. 30, 2004 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Absolute Maximum Rating... See More ⇒

 7.2. Size:164K  renesas
 r07ds0409ej 2sk3210ls.pdf pdf_icon

2SK3210S

Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous REJ03G0414-0300) Silicon N Channel MOS FET Rev.4.00 High Speed Power Switching May 16, 2011 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B ... See More ⇒

 7.3. Size:283K  inchange semiconductor
 2sk3210l.pdf pdf_icon

2SK3210S

isc N-Channel MOSFET Transistor 2SK3210L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 45m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

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Detailed specifications: 2SK3141-01, 2SK3147L, 2SK3147S, 2SK3150L, 2SK3150S, 2SK3161L, 2SK3161S, 2SK3210L, IRF530, 2SK3211L, 2SK3211S, 2SK3274L, 2SK3274S, 2SK3418, 2SK3419, 2SK3446, 2SK3447

Keywords - 2SK3210S MOSFET specs

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