2SK3419 Datasheet and Replacement

2SK3419 Silicon N Channel MOS FET High Speed Power Switching REJ03G1099-0200 (Previous: ADE-208-942) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 4.3 m typ. 4 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. Gate2. Drain (Flange)G3. Source12S3Rev.2.00 Sep 07,

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3417 Switching Regulator Applications Unit: mm Reverse-recovery time: trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 100 A (m

Ordering number : ENN71522SK3414LSN-Channel Silicon MOSFET2SK3414LSDC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C[2SK3414LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55Absolute Maximum Ratings at Ta=25CSANYO : TO-220FI(LS)Parameter Symbol Condi

Ordering number : ENN71752SK3411N-Channel Silicon MOSFET2SK3411DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SK3411]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3411]6.5 2.35.0 0.5

Ordering number : ENN71512SK3413LSN-Channel Silicon MOSFET2SK3413LSDC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C[2SK3413LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55Absolute Maximum Ratings at Ta=25CSANYO : TO-220FI(LS)Parameter Symbol Condi

Ordering number : ENN71762SK3412N-Channel Silicon MOSFET2SK3412DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2083B 4V drive.[2SK3412]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3412]6.5 2.35.0 0.5

Ordering number : ENN71532SK3415LSN-Channel Silicon MOSFET2SK3415LSDC / DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C[2SK3415LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55Absolute Maximum Ratings at Ta=25C SANYO : TO-220FI(LS)Parameter

2SK3418Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0407-0200(Previous ADE-208-941 (Z))Rev.2.00Sep.10.2004Features Low on-resistanceRDS(on) = 4.3 m typ. Capable of 4 V gate drive High speed switchingOutlineTO-220ABD1. Gate2. DrainG(Flange)3. SourceS123Absolute Maximum Ratings(Ta = 25C)Item Symbol Ratings UnitDrain t

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3414LSFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3417BFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3412IFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3413LSFEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3412DFEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 62m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3417KFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3415LSFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno