2SK3447 Datasheet. Specs and Replacement

Type Designator: 2SK3447  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm

Package: TO92MOD

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2SK3447 datasheet

 ..1. Size:80K  renesas
2sk3447.pdf pdf_icon

2SK3447

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 10 V) Outline RENESAS Package code PRSS0003DC-A (Package name TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.7.00 S... See More ⇒

 0.1. Size:93K  renesas
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2SK3447

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:188K  toshiba
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2SK3447

2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 90 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (VDS = 250 V) Enhancement mode Vth = 3.0 to 5... See More ⇒

 8.2. Size:187K  toshiba
2sk3440.pdf pdf_icon

2SK3447

2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 6.5 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (VDS = 60 V) Enhancement mode Vth = 2.0 to 4... See More ⇒

Detailed specifications: 2SK3210S, 2SK3211L, 2SK3211S, 2SK3274L, 2SK3274S, 2SK3418, 2SK3419, 2SK3446, IRL3713, 2SK3736, 2SK4093, 2SK4150, 2SK4151, H5N1503P, H5N1506P, H5N2003P, H5N2004DL

Keywords - 2SK3447 MOSFET specs

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