H5N1506P MOSFET. Datasheet pdf. Equivalent
Type Designator: H5N1506P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Drain Current |Id|: 98 A
Total Gate Charge (Qg): 100 nC
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO3P
H5N1506P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H5N1506P Datasheet (PDF)
1.1. rej03g0389 h5n1506p.pdf 
Size:108K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.1. rej03g0186 h5n1503p.pdf Size:98K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
Datasheet: 2SK3419 , 2SK3446 , 2SK3447 , 2SK3736 , 2SK4093 , 2SK4150 , 2SK4151 , H5N1503P , 2N5485 , H5N2003P , H5N2004DL , H5N2004DS , H5N2005DL , H5N2005DS , H5N2008P , H5N2301PF , H5N2305P .
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MOSFET: IPP45N04S4L-08 | IPI45N04S4L-08 | IPP12CNE8NG | IPI12CNE8NG | IPD12CNE8NG | IPP08CNE8NG | IPI08CNE8NG | IPI06CN10NG | IPP054NE8NG | IPI05CNE8NG | IPP050N06NG | SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F |