H5N1506P Datasheet and Replacement
Type Designator: H5N1506P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 98 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 380 nS
Cossⓘ - Output Capacitance: 1000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO3P
H5N1506P substitution
H5N1506P Datasheet (PDF)
rej03g0389 h5n1506p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0186 h5n1503p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SK3419 , 2SK3446 , 2SK3447 , 2SK3736 , 2SK4093 , 2SK4150 , 2SK4151 , H5N1503P , AON7403 , H5N2003P , H5N2004DL , H5N2004DS , H5N2005DL , H5N2005DS , H5N2008P , H5N2301PF , H5N2305P .
History: NP80N04MHE | SST4391 | SH8K13 | IRF5NJ3315 | IRLU024ZPBF | IRFI9540G | IPB60R070CFD7
Keywords - H5N1506P MOSFET datasheet
H5N1506P cross reference
H5N1506P equivalent finder
H5N1506P lookup
H5N1506P substitution
H5N1506P replacement
History: NP80N04MHE | SST4391 | SH8K13 | IRF5NJ3315 | IRLU024ZPBF | IRFI9540G | IPB60R070CFD7



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