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H5N2508DS Spec and Replacement


   Type Designator: H5N2508DS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.63 Ohm
   Package: DPAK

 H5N2508DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N2508DS Specs

 6.1. Size:104K  renesas
rej03g1108 h5n2508dldsds.pdf pdf_icon

H5N2508DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:132K  renesas
rej03g1107 h5n2505dldsds.pdf pdf_icon

H5N2508DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:100K  renesas
rej03g1109 h5n2509pds.pdf pdf_icon

H5N2508DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:108K  renesas
r07ds0399ej h5n2504dl.pdf pdf_icon

H5N2508DS

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 (Previous REJ03G1106-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 16, 2011 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package ... See More ⇒

Detailed specifications: H5N2305PF , H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , H5N2507P , H5N2508DL , 20N60 , H5N2509P , H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P , H5N2519P , H5N2522LS .

Keywords - H5N2508DS MOSFET specs

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