All MOSFET. H7N0203AB Datasheet

 

H7N0203AB Datasheet and Replacement


   Type Designator: H7N0203AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 380 nS
   Cossⓘ - Output Capacitance: 1850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220AB
 

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H7N0203AB Datasheet (PDF)

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H7N0203AB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: H5N5006DS , H5N5006FM , H5N5006LS , H5N5007P , H5N5012P , H5N5015P , H5N5016PL , H5N6001P , K4145 , H7N0307AB , H7N0307LD , H7N0307LM , H7N0307LS , H7N0308AB , H7N0308LD , H7N0308LM , H7N0308LS .

History: HAF1002

Keywords - H7N0203AB MOSFET datasheet

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