H7N0203AB Specs and Replacement
Type Designator: H7N0203AB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 380 nS
Cossⓘ - Output Capacitance: 1850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220AB
H7N0203AB substitution
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H7N0203AB datasheet
rej03g1119 h7n0203abds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: H5N5006DS , H5N5006FM , H5N5006LS , H5N5007P , H5N5012P , H5N5015P , H5N5016PL , H5N6001P , 2N7002 , H7N0307AB , H7N0307LD , H7N0307LM , H7N0307LS , H7N0308AB , H7N0308LD , H7N0308LM , H7N0308LS .
History: MTB050P10E3 | H5N6001P
Keywords - H7N0203AB MOSFET specs
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H7N0203AB replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MTB050P10E3 | H5N6001P
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