H7P1002DS Specs and Replacement

Type Designator: H7P1002DS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: DPAK

H7P1002DS substitution

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H7P1002DS datasheet

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H7P1002DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: H7N1005FM, H7N1005LD, H7N1005LM, H7N1005LS, H7N1009MD90TZ, H7P0601DL, H7P0601DS, H7P1002DL, IRF9640, H7P1006MD90TZ, H8N0801AB, HAT1016R, HAT1020R, HAT1021R, HAT1023R, HAT1024R, HAT1025R

Keywords - H7P1002DS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.