All MOSFET. H7P1002DS Datasheet

 

H7P1002DS Datasheet and Replacement


   Type Designator: H7P1002DS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: DPAK
      - MOSFET Cross-Reference Search

 

H7P1002DS Datasheet (PDF)

 6.1. Size:131K  renesas
 rej03g1601 h7p1002dldsds.pdf pdf_icon

H7P1002DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - H7P1002DS MOSFET datasheet

 H7P1002DS cross reference
 H7P1002DS equivalent finder
 H7P1002DS lookup
 H7P1002DS substitution
 H7P1002DS replacement

 

 
Back to Top

 


 
.