HAT1065R Spec and Replacement
Type Designator: HAT1065R
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Id| ⓘ - Maximum Drain Current: 0.25
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 37
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.2
Ohm
Package:
SOP8
HAT1065R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HAT1065R Specs
..1. Size:74K renesas
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7.1. Size:102K renesas
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9.1. Size:52K renesas
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9.2. Size:102K renesas
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9.3. Size:109K renesas
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9.5. Size:242K renesas
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9.13. Size:123K renesas
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9.18. Size:96K renesas
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9.19. Size:31K renesas
hat1048r.pdf 
HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features Capable of -4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.0 m typ (at VGS = -10V) Outline SOP-8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1048R Absol... See More ⇒
9.20. Size:96K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.21. Size:102K renesas
rej03g1148 hat1026rds.pdf 
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9.22. Size:97K renesas
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9.24. Size:103K renesas
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9.25. Size:25K hitachi
hat1044m.pdf 
HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Features Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP 6 4 5 6 1 2 5 6 3 D D D D 2 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1044M Absolute Maximum Rating... See More ⇒
9.27. Size:53K hitachi
hat1046r.pdf 
HAT1046R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-1222 (Z) 1st. Edition Mar. 2001 Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistance RDS(on) = 30 m typ. (at VGS = 4 V) External View SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate S 3 S1 5, 6, 7... See More ⇒
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HAT1020RJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top... See More ⇒
9.29. Size:1074K cn vbsemi
hat1024r.pdf 
HAT1024R www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie... See More ⇒
9.30. Size:1074K cn vbsemi
hat1024rj.pdf 
HAT1024RJ www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi... See More ⇒
9.31. Size:2047K cn vbsemi
hat1048rj.pdf 
HAT1048RJ www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFET VDS (V) -30 RDS(on) max. ( ) at VGS = 10 V 0.0050 Enables higher power density RDS(on) max. ( ) at VGS = 4.5 V 0.0080 100 % Rg and UIS tested Qg typ. (nC) 27 ID (A) 18 Configuration Single APPLICATIONS SO-8 Single S D Battery management in ... See More ⇒
9.32. Size:1929K cn vbsemi
hat1047r.pdf 
HAT1047R www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs... See More ⇒
9.33. Size:1037K cn vbsemi
hat1047rj.pdf 
HAT1047RJ www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC... See More ⇒
Detailed specifications: HAT1026R
, HAT1038R
, HAT1047R
, HAT1047RJ
, HAT1048R
, HAT1054R
, HAT1055R
, HAT1055RJ
, 20N60
, HAT1065T
, HAT1069C
, HAT1072H
, HAT1089C
, HAT1090C
, HAT1091C
, HAT1093C
, HAT1094C
.
Keywords - HAT1065R MOSFET specs
HAT1065R cross reference
HAT1065R equivalent finder
HAT1065R lookup
HAT1065R substitution
HAT1065R replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.