HAT1065T MOSFET. Datasheet pdf. Equivalent

   Type Designator: HAT1065T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.2 Ohm
   Package: TSSOP8

HAT1065T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS