HAT2019R Datasheet. Specs and Replacement

Type Designator: HAT2019R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOP8

HAT2019R substitution

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HAT2019R datasheet

 ..1. Size:65K  hitachi
 hat2019r.pdf pdf_icon

HAT2019R

HAT2019R N MOS FET ADJ-208-474 (Z) 96.06 2.5V SOP 8 5 6 7 8 4 3 2 5 6 7 8 1 D D D D 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S... See More ⇒

 8.1. Size:109K  renesas
 rej03g1156 hat2016rds.pdf pdf_icon

HAT2019R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:1639K  cn vbsemi
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HAT2019R

HAT2016R www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

 8.3. Size:1056K  cn vbsemi
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HAT2019R

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Detailed specifications: HAT1110R, HAT1111C, HAT1123R, HAT1126R, HAT1126RJ, HAT1146C, HAT1147C, HAT2016R, IRFP250N, HAT2020R, HAT2022R, HAT2024R, HAT2026R, HAT2027R, HAT2028R, HAT2029R, HAT2033R

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