BUZ36 Datasheet and Replacement
Type Designator: BUZ36
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO3
BUZ36 substitution
BUZ36 Datasheet (PDF)
buz36.pdf

isc N-Channel Mosfet Transistor BUZ36FEATURESStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo
Datasheet: BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 , IRFB4110 , BUZ41A , BUZ42 , BUZ45 , BUZ45A , BUZ46 , BUZ50A , BUZ50A-220M , BUZ50A-220SM .
History: IXTH33N45
Keywords - BUZ36 MOSFET datasheet
BUZ36 cross reference
BUZ36 equivalent finder
BUZ36 lookup
BUZ36 substitution
BUZ36 replacement
History: IXTH33N45



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