BUZ36 Datasheet and Replacement
Type Designator: BUZ36
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO3
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BUZ36 Datasheet (PDF)
buz36.pdf
isc N-Channel Mosfet Transistor BUZ36FEATURESStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo
Datasheet: BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 , P55NF06 , BUZ41A , BUZ42 , BUZ45 , BUZ45A , BUZ46 , BUZ50A , BUZ50A-220M , BUZ50A-220SM .
History: BUZ35
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