BUZ36 MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUZ36
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO3

BUZ36 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUZ36 Datasheet (PDF)

..1. Size:223K inchange semiconductor
buz36.pdf

isc N-Channel Mosfet Transistor BUZ36FEATURESStatic Drain-Source On-Resistance: R = 0.12(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

0.1. Size:176K siemens
buz361.pdf