RJK0226DNS MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK0226DNS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 8.7 nS
   Cossⓘ - Output Capacitance: 565 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: HVSON

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