All MOSFET. RJK0226DNS Datasheet

 

RJK0226DNS Datasheet and Replacement


   Type Designator: RJK0226DNS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.7 nS
   Cossⓘ - Output Capacitance: 565 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: HVSON
 

 RJK0226DNS substitution

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RJK0226DNS Datasheet (PDF)

 ..1. Size:165K  renesas
r07ds0260ej rjk0226dns.pdf pdf_icon

RJK0226DNS

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110Rev.1.10Mar 03, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag

 8.1. Size:143K  renesas
r07ds0259ej rjk0225dns.pdf pdf_icon

RJK0226DNS

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching Mar 03, 2011Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name: 8pin HVSON(3333)

 8.2. Size:75K  renesas
r07ds0126ej rjk0223dns.pdf pdf_icon

RJK0226DNS

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030(Previous: REJ03G1952-0020)Rev.0.30Sep 02, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

 8.3. Size:63K  renesas
r07ds0125ej rjk0222dns.pdf pdf_icon

RJK0226DNS

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030(Previous: REJ03G1951-0020)Rev.0.30Sep 06, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

Datasheet: RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA , RJK0222DNS , RJK0223DNS , RJK0225DNS , IRF540N , RJK0230DPA , RJK0301DPB , RJK0301DPC , RJK0302DPB , RJK0302DPC , RJK0303DPB , RJK0303DPC , RJK0304DPB .

History: PSA06N70

Keywords - RJK0226DNS MOSFET datasheet

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 RJK0226DNS equivalent finder
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