RJK0328DPB Datasheet. Specs and Replacement

Type Designator: RJK0328DPB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 1150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: LFPAK

RJK0328DPB substitution

- MOSFET ⓘ Cross-Reference Search

 

RJK0328DPB datasheet

 0.1. Size:135K  renesas
 rej03g1637 rjk0328dpbds.pdf pdf_icon

RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:113K  renesas
 rjk0323jpd.pdf pdf_icon

RJK0328DPB

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Apr 18, 2011 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code PRSS0004ZD-C (Package name DPAK (S)) 2, 4 4 D 1... See More ⇒

 8.2. Size:81K  renesas
 rjk0329dpb-01.pdf pdf_icon

RJK0328DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R... See More ⇒

 8.3. Size:84K  renesas
 r07ds0265ej rjk0329dpb.pdf pdf_icon

RJK0328DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 (Previous REJ03G1638-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R... See More ⇒

SHOW MORE

Detailed specifications: RJK0303DPC, RJK0304DPB, RJK0304DPC, RJK0305DPB, RJK0305DPC, RJK0316DPA, RJK0316DSP, RJK0317DSP, IRFB4115, RJK0329DPB, RJK0330DPB, RJK0331DPB, RJK0332DPB, RJK0346DPA, RJK0348DPA, RJK0348DSP, RJK0349DPA

Keywords - RJK0328DPB MOSFET specs

 RJK0328DPB cross reference

 RJK0328DPB equivalent finder

 RJK0328DPB pdf lookup

 RJK0328DPB substitution

 RJK0328DPB replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs