Справочник MOSFET. RJK0328DPB

 

RJK0328DPB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK0328DPB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 42 nC
   trⓘ - Время нарастания: 4.3 ns
   Cossⓘ - Выходная емкость: 1150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0021 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для RJK0328DPB

 

 

RJK0328DPB Datasheet (PDF)

 0.1. Size:135K  renesas
 rej03g1637 rjk0328dpbds.pdf

RJK0328DPB RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:113K  renesas
 rjk0323jpd.pdf

RJK0328DPB RJK0328DPB

Preliminary Datasheet RJK0323JPD R07DS0334EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Apr 18, 2011Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 7.0 m typ. Low drive current Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (S))2, 44D1

 8.2. Size:81K  renesas
 rjk0329dpb-01.pdf

RJK0328DPB RJK0328DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

 8.3. Size:84K  renesas
 r07ds0265ej rjk0329dpb.pdf

RJK0328DPB RJK0328DPB

Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500(Previous: REJ03G1638-0400)Silicon N Channel Power MOS FET Rev.5.00Power Switching Mar 01, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline R

 8.4. Size:124K  renesas
 rjk0329dpb-00.pdf

RJK0328DPB RJK0328DPB

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... RJK0303DPC , RJK0304DPB , RJK0304DPC , RJK0305DPB , RJK0305DPC , RJK0316DPA , RJK0316DSP , RJK0317DSP , IRF630 , RJK0329DPB , RJK0330DPB , RJK0331DPB , RJK0332DPB , RJK0346DPA , RJK0348DPA , RJK0348DSP , RJK0349DPA .

History: HM530 | IXFT50N60P3

 

 
Back to Top