RJK0389DPA Datasheet and Replacement
Type Designator: RJK0389DPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 15(20) A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.1(4) nS
Cossⓘ - Output Capacitance: 165(240) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107(0.0089) Ohm
Package: WPAK
- MOSFET Cross-Reference Search
RJK0389DPA Datasheet (PDF)
rej03g1722 rjk0389dpads.pdf

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410High Speed Power Switching Rev.4.10May 13, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A(Package name: WPAK-D2)2 3 4 9D1 D1 D1S1/D2
rej03g1827 rjk0380dpads.pdf

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220Power Switching Rev.2.20 May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
rej03g1829 rjk0381dpads.pdf

Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210Power Switching Rev.2.10May 13, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES
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