All MOSFET. RJK0389DPA Datasheet

 

RJK0389DPA Datasheet and Replacement


   Type Designator: RJK0389DPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15(20) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.1(4) nS
   Cossⓘ - Output Capacitance: 165(240) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107(0.0089) Ohm
   Package: WPAK
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RJK0389DPA Datasheet (PDF)

 0.1. Size:163K  renesas
rej03g1722 rjk0389dpads.pdf pdf_icon

RJK0389DPA

Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410High Speed Power Switching Rev.4.10May 13, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A(Package name: WPAK-D2)2 3 4 9D1 D1 D1S1/D2

 8.1. Size:83K  renesas
rej03g1827 rjk0380dpads.pdf pdf_icon

RJK0389DPA

Preliminary Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220Power Switching Rev.2.20 May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE

 8.2. Size:82K  renesas
rej03g1829 rjk0381dpads.pdf pdf_icon

RJK0389DPA

Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210Power Switching Rev.2.10May 13, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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