RJK03F7DNS
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK03F7DNS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8.6
nS
Cossⓘ -
Output Capacitance: 230
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078
Ohm
Package: HWSON8
RJK03F7DNS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK03F7DNS
Datasheet (PDF)
0.1. Size:92K renesas
rej03g1917 rjk03f7dnsds.pdf 
Preliminary Datasheet RJK03F7DNS REJ03G1917-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
8.1. Size:91K renesas
rej03g1919 rjk03f9dnsds.pdf
Preliminary Datasheet RJK03F9DNS REJ03G1919-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
8.2. Size:91K renesas
rej03g1918 rjk03f8dnsds.pdf
Preliminary Datasheet RJK03F8DNS REJ03G1918-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(P
8.3. Size:91K renesas
rej03g1916 rjk03f6dnsds.pdf
DatasheetRJK03F6DNS REJ03G1916-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(Package name:
8.4. Size:108K renesas
rej03g1934 rjk03f0dpads.pdf
Preliminary Datasheet RJK03F0DPA REJ03G1934-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
Datasheet: FQT7N10L
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